• SI7469DP-T1-GE3 PowerPAK-SO-8
SI7469DP-T1-GE3 PowerPAK-SO-8

SI7469DP-T1-GE3

Single-Element N-Channel MOSFET, Capable of Handling 1.8A Drain Current

Quantity Unit Price(USD) Ext. Price
1 $1.529 $1.53
10 $1.395 $13.95
30 $1.309 $39.27
100 $1.222 $122.20
500 $1.183 $591.50
1000 $1.166 $1,166.00

Inventory:8,426

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for SI7469DP-T1-GE3 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of SI7469DP-T1-GE3

The SI7469DP-T1-GE3 is a P-Channel MOSFET transistor designed for high-speed switching applications. It features a low on-resistance and low gate charge, making it suitable for efficient power management in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7469DP-T1-GE3 MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The SI7469DP-T1-GE3 offers high-speed switching characteristics for rapid power control.
  • Low On-Resistance: With low on-resistance, this MOSFET minimizes power losses and heat generation during operation.
  • Low Gate Charge: The low gate charge ensures efficient switching with minimal drive requirements.
  • Enhanced Power Management: Suitable for applications requiring efficient power management and voltage regulation.
  • Compact Design: Available in a compact package, the SI7469DP-T1-GE3 saves board space in electronic designs.

Note: For detailed technical specifications, please refer to the SI7469DP-T1-GE3 datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for efficient power control.
  • Motor Control: Suitable for motor control applications requiring high-speed switching.
  • DC-DC Converters: Used in DC-DC converter circuits for voltage regulation and power efficiency.

Functionality

The SI7469DP-T1-GE3 P-Channel MOSFET transistor enables high-speed switching with low on-resistance, making it a reliable component for power management and control in electronic systems.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal for switching operation.
  • Source and Drain: Connect the source (S) pin to the ground and the drain (D) pin to the load for power control.

Frequently Asked Questions

Q: Can the SI7469DP-T1-GE3 be used in high-frequency applications?
A: Yes, the SI7469DP-T1-GE3 is suitable for high-speed switching applications, including high-frequency circuits.

Equivalent

For similar functionalities, consider these alternatives to the SI7469DP-T1-GE3:

  • SI7469DP-T1-E3: A variant of the SI7469DP-T1 series with similar performance characteristics.
  • FDS8884: This P-Channel MOSFET offers comparable specifications to the SI7469DP-T1-GE3 for power management applications.

SI7469DP-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-SO-8 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 28 A Rds On - Drain-Source Resistance 29 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 160 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 83 W
Channel Mode Enhancement Tradename TrenchFET
Series SI7 Brand Vishay Semiconductors
Configuration Single Fall Time 110 ns
Forward Transconductance - Min 52 S Height 1.04 mm
Length 6.15 mm Product Type MOSFET
Rise Time 220 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 95 ns Typical Turn-On Delay Time 45 ns
Width 5.15 mm Part # Aliases SI7469DP-GE3
Unit Weight 0.017870 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

SIHG47N60E-GE3

SIHG47N60E-GE3

Unipolar N-MOSFET transistor with a voltage rating of 600V and a current rating of 30A
SI2337DS-T1-E3

SI2337DS-T1-E3

P-channel MOSFET
SI7489DP-T1-GE3

SI7489DP-T1-GE3

VISHAY - SI7489DP-T1-GE3 - MOSFET, P CH, 100V, 28A, POWERPAK
SI2323DS-T1-E3

SI2323DS-T1-E3

SI2323DS-T1-E3 is a P-type MOSFET with SOT-23 packaging
SI7850DP-T1-E3

SI7850DP-T1-E3

60V, 6.2A Power MOSFET
SI7137DP-T1-GE3

SI7137DP-T1-GE3

P-Channel Silicon Power MOSFET with 42 Amperes Current Rating and 20 Volts Voltage Limit, featuring a 0.00195 Ohm On-Resistance
SI4925DDY-T1-GE3

SI4925DDY-T1-GE3

MOSFET with P-Channel
SI7164DP-T1-GE3

SI7164DP-T1-GE3

N-Channel Power Field-Effect Transistor with 23.5A current capacity and 60V voltage capacity