SI7850DP-T1-E3
60V, 6.2A Power MOSFET
Inventory:4,250
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Part Number : SI7850DP-T1-E3
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Package/Case : PowerPAK-SO-8
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Brands : VISHAY
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : SI7850DP-T1-E3 DataSheet (PDF)
The SI7850DP-T1-E3 is a dual N-channel MOSFET IC designed for power management applications. This IC features high efficiency, low on-resistance, and fast switching speeds, making it suitable for various power supply and motor control systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI7850DP-T1-E3 IC for a visual representation. Note: For detailed technical specifications, please refer to the SI7850DP-T1-E3 datasheet. Functionality The SI7850DP-T1-E3 is a dual N-channel MOSFET IC that enables efficient power management and control in various electronic systems. It offers high performance and reliability in power supply and motor control applications. Usage Guide Q: What is the maximum voltage rating for the SI7850DP-T1-E3? Q: Is the SI7850DP-T1-E3 suitable for high-temperature environments? For similar functionalities, consider these alternatives to the SI7850DP-T1-E3:Overview of SI7850DP-T1-E3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SI7850DP-T1-E3 can handle voltages up to X volts.
A: Yes, the SI7850DP-T1-E3 is designed to operate reliably in high-temperature environments.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-SO-8 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 6.2 A | Rds On - Drain-Source Resistance | 22 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 18 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.8 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI7 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 12 ns |
Forward Transconductance - Min | 26 S | Height | 1.04 mm |
Length | 6.15 mm | Product Type | MOSFET |
Rise Time | 10 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N Channel |
Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 10 ns |
Width | 5.15 mm | Part # Aliases | SI7850DP-E3 |
Unit Weight | 0.017870 oz |
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