• SIRA14DP-T1-GE3 PowerPAK? SO-8
SIRA14DP-T1-GE3 PowerPAK? SO-8

SIRA14DP-T1-GE3

Trans MOSFET N-CH 30V 19.8A 8-Pin PowerPAK SO EP T/R

Inventory:8,054

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Overview of SIRA14DP-T1-GE3

N-Channel 30 V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8

SIRA14DP-T1-GE3

Key Features

["TrenchFET\u00ae Gen IV Power MOSFET ", "100 % R g and UIS Tested ", "Material categorization: For definitions of compliance please see www.vishay.com/doc?99912"]

Application

["High Power Density DC/DC ", "Synchronous Rectification ", "Embedded DC/DC"]

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Vishay Siliconix
Series TrenchFET® Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 15 V FET Feature -
Power Dissipation (Max) 3.6W (Ta), 31.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8 Base Product Number SIRA14

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