SI7164DP-T1-GE3
N-Channel Power Field-Effect Transistor with 23.5A current capacity and 60V voltage capacity
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $1.577 | $1.58 |
| 10 | $1.360 | $13.60 |
| 30 | $1.241 | $37.23 |
| 100 | $1.107 | $110.70 |
| 500 | $1.047 | $523.50 |
| 1000 | $1.020 | $1,020.00 |
Inventory:6,627
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : SI7164DP-T1-GE3
-
Package/Case : PowerPAK-SO-8
-
Brands : VISHAY
-
Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
-
Datesheet : SI7164DP-T1-GE3 DataSheet (PDF)
Overview of SI7164DP-T1-GE3
MOSFET, N CH, 60V, 60A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
Key Features
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Application
- Industrial
- Power Management
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 60 A |
| Rds On - Drain-Source Resistance | 6.25 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V | Qg - Gate Charge | 49.5 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
| Tradename | TrenchFET | Series | SI7 |
| Brand | Vishay Semiconductors | Configuration | Single |
| Fall Time | 11 ns | Forward Transconductance - Min | 30 S |
| Product Type | MOSFET | Rise Time | 11 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 40 ns |
| Typical Turn-On Delay Time | 23 ns | Part # Aliases | SI7164DP-GE3 |
| Unit Weight | 0.017870 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
SIHG47N60E-GE3
Unipolar N-MOSFET transistor with a voltage rating of 600V and a current rating of 30A
SI2337DS-T1-E3
P-channel MOSFET
SI7489DP-T1-GE3
VISHAY - SI7489DP-T1-GE3 - MOSFET, P CH, 100V, 28A, POWERPAK
SI7469DP-T1-GE3
Single-Element N-Channel MOSFET, Capable of Handling 1.8A Drain Current
SI2323DS-T1-E3
SI2323DS-T1-E3 is a P-type MOSFET with SOT-23 packaging
SI7850DP-T1-E3
60V, 6.2A Power MOSFET
SI7137DP-T1-GE3
P-Channel Silicon Power MOSFET with 42 Amperes Current Rating and 20 Volts Voltage Limit, featuring a 0.00195 Ohm On-Resistance
SI4925DDY-T1-GE3
MOSFET with P-Channel