• SI2333CDS-T1-GE3 SOT-23-3
SI2333CDS-T1-GE3 SOT-23-3

SI2333CDS-T1-GE3

Product Code: SI2333CDS-T1-GE3 - A surface mount power MOSFET with a P-channel configuration

Quantity Unit Price(USD) Ext. Price
1 $0.359 $0.36
10 $0.285 $2.85
30 $0.254 $7.62
100 $0.215 $21.50
500 $0.198 $99.00
1000 $0.188 $188.00

Inventory:4,455

*The price is for reference only.
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Overview of SI2333CDS-T1-GE3

The SI2333CDS-T1-GE3 is a P-Channel MOSFET transistor with a compact SOT-23 package, designed for efficient power management applications. This MOSFET features low on-state resistance and high current-carrying capability, making it suitable for various switching scenarios.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram showing the connections and usage of the SI2333CDS-T1-GE3 MOSFET for practical applications.

Key Features

  • P-Channel MOSFET: Offers P-channel enhancement mode transistor functionality for easy integration in circuits.
  • Low On-State Resistance: Provides efficient power handling with minimal voltage drop during operation.
  • High Current Capability: Capable of handling high continuous drain currents for demanding applications.
  • Compact SOT-23 Package: Space-saving surface-mount package suitable for compact design requirements.
  • Fast Switching Speed: Enables quick switching transitions for enhanced circuit performance.

Note: For detailed technical specifications, please refer to the SI2333CDS-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power switching and regulation in various electronic devices.
  • Battery Protection: Suitable for battery protection circuits in portable electronics.
  • Switching Circuits: Used in switching applications for controlling the flow of current in circuits.

Functionality

The SI2333CDS-T1-GE3 P-Channel MOSFET transistor provides efficient power management capabilities with its low on-state resistance and high current handling. It is a reliable component for controlling power flow in electronic systems.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the control signal for switching operations.
  • Drain Connection: Attach the load to the drain pin (D) for power transfer.
  • Source Connection: Connect the source pin (S) to the ground reference.

Frequently Asked Questions

Q: What is the maximum drain current rating of the SI2333CDS-T1-GE3?
A: The SI2333CDS-T1-GE3 can handle a maximum continuous drain current specified in the datasheet.

Q: Is the SI2333CDS-T1-GE3 suitable for high-frequency switching applications?
A: The SI2333CDS-T1-GE3 features fast switching speeds, making it suitable for high-frequency switching requirements in circuits.

Equivalent

For similar functionalities, consider these alternatives to the SI2333CDS-T1-GE3:

  • SI2301DS-T1-GE3: Another P-Channel MOSFET with comparable specifications and performance characteristics.
  • SI2394DS-T1-GE3: A MOSFET offering similar power handling capabilities in a different package configuration.

SI2333CDS-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 7.1 A Rds On - Drain-Source Resistance 35 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 12 ns
Height 1.45 mm Length 2.9 mm
Product Type MOSFET Rise Time 35 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 13 ns Width 1.6 mm
Part # Aliases SI2333CDS-T1-BE3 SI2333CDS-GE3 Unit Weight 0.000282 oz

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