SI2325DS-T1-E3
Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R
Inventory:7,646
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Part Number : SI2325DS-T1-E3
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Package/Case : SOT23-3
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Brands : VISHAY
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Components Categories : Single FETs, MOSFETs
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Datesheet : SI2325DS-T1-E3 DataSheet (PDF)
Overview of SI2325DS-T1-E3
P-Channel 150 V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Key Features
- Ultra-low ON-resistance
- Small size
- -55 to 150°C Operating temperature range
Application
- Industrial
- Power Management
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
Id - Continuous Drain Current | 690 mA | Rds On - Drain-Source Resistance | 1.2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 12 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 11 ns |
Forward Transconductance - Min | 2.2 S | Product Type | MOSFET |
Rise Time | 11 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 16 ns | Typical Turn-On Delay Time | 7 ns |
Part # Aliases | SI2325DS-T1-BE3 SI2325DS-E3 | Unit Weight | 0.000282 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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