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SI2325DS-T1-E3

Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R

Inventory:7,646

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Please submit RFQ for SI2325DS-T1-E3 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of SI2325DS-T1-E3

P-Channel 150 V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Key Features

  • Ultra-low ON-resistance
  • Small size
  • -55 to 150°C Operating temperature range

Application

  • Industrial
  • Power Management

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 690 mA Rds On - Drain-Source Resistance 1.2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 12 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.25 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 11 ns
Forward Transconductance - Min 2.2 S Product Type MOSFET
Rise Time 11 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 16 ns Typical Turn-On Delay Time 7 ns
Part # Aliases SI2325DS-T1-BE3 SI2325DS-E3 Unit Weight 0.000282 oz

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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