IPD70N10S3-12
OptiMOS-T Power-Transistor N-channel - Enhancement mode
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.199 | $2.20 |
200 | $0.851 | $170.20 |
500 | $0.822 | $411.00 |
1000 | $0.807 | $807.00 |
Inventory:6,901
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Part Number : IPD70N10S3-12
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Package/Case : TO-252-3
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : IPD70N10S3-12 DataSheet (PDF)
Overview of IPD70N10S3-12
Power Field-Effect Transistor, 70A I(D), 100V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, TO-252, 3 PIN
Key Features
- Static drain-source on-resistance:
- RDS(on)≤0.6Ω
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device
- performance and reliable operation
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IPD70N10S3-12 | Pbfree Code | Yes |
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-252 |
Package Description | GREEN, PLASTIC, TO-252, 3 PIN | Pin Count | 4 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Samacsys Manufacturer | Infineon |
Avalanche Energy Rating (Eas) | 410 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (Abs) (ID) | 70 A |
Drain Current-Max (ID) | 70 A | Drain-source On Resistance-Max | 0.0111 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252 |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 125 W |
Pulsed Drain Current-Max (IDM) | 280 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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