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IPD33CN10NGATMA1

Trans MOSFET N-CH 100V 27A 3-Pin(2+Tab) DPAK T/R

Inventory:7,802

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Please submit RFQ for IPD33CN10NGATMA1 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IPD33CN10NGATMA1

The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 65 Weeks
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 47 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 27 A
Drain-source On Resistance-Max 0.033 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 108 A Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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