IPB065N15N3GATMA1
IPB065N15N3GATMA1 N-Channel MOSFET, 130 A, 150 V OptiMOS 3, 7-Pin D2PAK Infineon
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Part Number : IPB065N15N3GATMA1
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Package/Case : PG-TO263-7
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : IPB065N15N3GATMA1 DataSheet (PDF)
Overview of IPB065N15N3GATMA1
Power Field-Effect Transistor, 130A I(D), 150V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7
Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175°C operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC1) for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | IPB065N15N3GATMA1 | Pbfree Code | No |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Part Package Code | TO-263 |
| Package Description | SMALL OUTLINE, R-PSSO-G6 | Pin Count | 3 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 780 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 150 V | Drain Current-Max (ID) | 130 A |
| Drain-source On Resistance-Max | 0.0065 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263 | JESD-30 Code | R-PSSO-G6 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 520 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | TIN |
| Terminal Form | GULL WING | Terminal Position | SINGLE |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Manufacturer | Infineon | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TO-263-7 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 150 V | Id - Continuous Drain Current | 130 A |
| Rds On - Drain-Source Resistance | 5.2 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 93 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 300 W | Channel Mode | Enhancement |
| Tradename | OptiMOS | Series | OptiMOS 3 |
| Brand | Infineon Technologies | Fall Time | 14 ns |
| Forward Transconductance - Min | 70 S | Height | 4.4 mm |
| Length | 10 mm | Product Type | MOSFET |
| Rise Time | 35 ns | Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 46 ns | Typical Turn-On Delay Time | 25 ns |
| Width | 9.25 mm | Part # Aliases | IPB065N15N3 G SP000521724 |
| Unit Weight | 0.056438 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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