• packageimg
packageimg

FDMS3602S

Trans MOSFET N-CH Si 25V 15A/26A 8-Pin Power 56 T/R

Inventory:5,059

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for FDMS3602S or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDMS3602S

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Key Features

  • Q1: N-Channel
    Max RDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
    Max RDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A
  • Q2: N-Channel
    Max RDS(on) = 2.2 mΩ at VGS = 10 V, ID= 26 A
    Max RDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A
  • Low-inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case Power-56-8
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 25 V Id - Continuous Drain Current 15 A
Rds On - Drain-Source Resistance 5.6 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 19 nC, 45 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.5 W Channel Mode Enhancement
Tradename Power Stage PowerTrench Series FDMS3602S
Brand onsemi / Fairchild Configuration Dual
Fall Time 1.8 ns, 3.2 ns Forward Transconductance - Min 67 S, 132 S
Height 1.1 mm Length 6 mm
Product Type MOSFET Rise Time 2 ns, 4.2 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Typical Turn-Off Delay Time 19 nS, 31 nS
Typical Turn-On Delay Time 7.9 nS, 12 nS Width 5 mm
Unit Weight 0.003175 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

FDD4685

FDD4685

channel power field effect transistor, 8.4A, 40V, 0.042ohm, mosfet
FDC6561AN

FDC6561AN

MOSFET SSOT-6 N-CH 30V
FDC6327C

FDC6327C

SuperSOT package with 6 pins
FDC604P

FDC604P

MOSFET SSOT-6 P-CH
FDG6332C

FDG6332C

Component type: Trans MOSFET
FDG1024NZ

FDG1024NZ

These MOSFETs offer efficient power handling capabilities with a compact SC-88-6 package design, making them ideal for space-constrained PCB layouts
FDS4141

FDS4141

Trans MOSFET P-CH 40V 10.8A 8-Pin SOIC T/R
FDP12N60NZ

FDP12N60NZ

Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube