• FDG1024NZ SOT-323-6
FDG1024NZ SOT-323-6

FDG1024NZ

These MOSFETs offer efficient power handling capabilities with a compact SC-88-6 package design, making them ideal for space-constrained PCB layouts

Inventory:6,387

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  • Part Number : FDG1024NZ

  • Package/Case : SOT-323-6

  • Brands : Onsemi

  • Components Categories : FET, MOSFET Arrays

  • Datesheet : FDG1024NZ DataSheet (PDF)

Quick Inquiry

Please submit RFQ for FDG1024NZ or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDG1024NZ

This dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

FDG1024NZ

Key Features

  • Max rDS(on) = 175 mO at VGS = 4.5 V, ID = 1.2 A
  • Max rDS(on) = 215 mO at VGS = 2.5 V, ID = 1.0 A
  • Max rDS(on) = 270 mO at VGS = 1.8 V, ID = 0.9 A
  • Max rDS(on) = 389 mO at VGS = 1.5 V, ID = 0.8 A
  • HBM ESD protection level >2 kV (Note 3)
  • Very low level gate drive requirements allowing operation in 1.5 V circuits (VGS(th) < 1 V)
  • Very small package outline SC70-6
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-323-6 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 1.2 A Rds On - Drain-Source Resistance 321 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 2.6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 360 mW
Channel Mode Enhancement Tradename PowerTrench
Series FDG1024NZ Brand onsemi / Fairchild
Configuration Dual Forward Transconductance - Min 4 S
Height 1.1 mm Length 2 mm
Product MOSFET Small Signals Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Type Power Trench MOSFET
Typical Turn-Off Delay Time 11 ns Typical Turn-On Delay Time 3.7 ns
Width 1.25 mm Unit Weight 0.000988 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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