FDD4685
channel power field effect transistor, 8.4A, 40V, 0.042ohm, mosfet
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.810 | $0.81 |
10 | $0.674 | $6.74 |
30 | $0.606 | $18.18 |
100 | $0.538 | $53.80 |
500 | $0.498 | $249.00 |
1000 | $0.478 | $478.00 |
Inventory:5,237
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Part Number : FDD4685
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Package/Case : DPAK-3 (TO-252-3)
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Brands : Onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : FDD4685 DataSheet (PDF)
The FDD4685 is a N-channel MOSFET transistor designed for high-speed switching applications in power electronics.It offers low on-state resistance and fast switching characteristics,making it ideal for efficient power management in various circuits. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the FDD4685 MOSFET transistor for a visual representation. Note:For detailed technical specifications,please refer to the FDD4685 datasheet. Functionality The FDD4685 N-channel MOSFET transistor enables efficient and high-speed switching in power electronic circuits.Its low on-state resistance and fast switching characteristics make it a reliable component for various power management applications. Usage Guide Q:Can the FDD4685 be used in high-frequency applications? For similar functionalities,consider these alternatives to the FDD4685:Overview of FDD4685
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A:Yes,the FDD4685 is designed for high-speed switching applications and can be used in high-frequency circuits.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | DPAK-3 (TO-252-3) |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 32 A |
Rds On - Drain-Source Resistance | 27 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 27 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 69 W | Channel Mode | Enhancement |
Tradename | PowerTrench | Series | FDD4685 |
Brand | onsemi / Fairchild | Configuration | Single |
Fall Time | 14 ns | Height | 2.39 mm |
Length | 6.73 mm | Product Type | MOSFET |
Rise Time | 15 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 34 ns | Typical Turn-On Delay Time | 8 ns |
Width | 6.22 mm | Unit Weight | 0.011640 oz |
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