• FDD4685 DPAK-3 (TO-252-3)
FDD4685 DPAK-3 (TO-252-3)

FDD4685

channel power field effect transistor, 8.4A, 40V, 0.042ohm, mosfet

Quantity Unit Price(USD) Ext. Price
1 $0.810 $0.81
10 $0.674 $6.74
30 $0.606 $18.18
100 $0.538 $53.80
500 $0.498 $249.00
1000 $0.478 $478.00

Inventory:5,237

*The price is for reference only.
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  • Part Number : FDD4685

  • Package/Case : DPAK-3 (TO-252-3)

  • Brands : Onsemi

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : FDD4685 DataSheet (PDF)

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Overview of FDD4685

The FDD4685 is a N-channel MOSFET transistor designed for high-speed switching applications in power electronics.It offers low on-state resistance and fast switching characteristics,making it ideal for efficient power management in various circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FDD4685 MOSFET transistor for a visual representation.

Key Features

  • High-Speed Switching:The FDD4685 offers fast switching speeds,which is essential for high-frequency applications.
  • Low On-State Resistance:With its low on-state resistance,this MOSFET minimizes power losses and improves efficiency.
  • Enhanced Power Dissipation:Designed to handle high power levels effectively for robust performance in power circuits.
  • Overcurrent Protection:Provides protection against overcurrent conditions,enhancing the reliability of connected devices.
  • Wide Operating Voltage Range:Compatible with a wide range of voltages for versatile application possibilities.

Note:For detailed technical specifications,please refer to the FDD4685 datasheet.

Application

  • Power Management Systems:Suitable for use in power management systems requiring high-speed switching capabilities.
  • Inverters and Converters:Commonly used in inverters and converters to control the flow of power efficiently.
  • Motor Control:Applicable in motor control circuits for precise and responsive power modulation.

Functionality

The FDD4685 N-channel MOSFET transistor enables efficient and high-speed switching in power electronic circuits.Its low on-state resistance and fast switching characteristics make it a reliable component for various power management applications.

Usage Guide

  • Gate Control:Apply appropriate voltage levels to the gate terminal to control the switching behavior of the MOSFET.
  • Drain-Source Connection:Connect the load between the drain and source terminals to regulate the power flow.
  • Heat Management:Ensure proper heat dissipation to maintain the MOSFET within its temperature limits for optimal performance.

Frequently Asked Questions

Q:Can the FDD4685 be used in high-frequency applications?
A:Yes,the FDD4685 is designed for high-speed switching applications and can be used in high-frequency circuits.

Equivalent

For similar functionalities,consider these alternatives to the FDD4685:

  • IRF3205:A popular N-channel MOSFET with similar high-speed switching capabilities and power handling capacity.
  • FQP30N06L:An alternative N-channel MOSFET known for its low on-state resistance and fast switching characteristics.

FDD4685

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case DPAK-3 (TO-252-3)
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 32 A
Rds On - Drain-Source Resistance 27 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 27 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 69 W Channel Mode Enhancement
Tradename PowerTrench Series FDD4685
Brand onsemi / Fairchild Configuration Single
Fall Time 14 ns Height 2.39 mm
Length 6.73 mm Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 34 ns Typical Turn-On Delay Time 8 ns
Width 6.22 mm Unit Weight 0.011640 oz

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