• FDP12N60NZ TO-220-3
FDP12N60NZ TO-220-3

FDP12N60NZ

Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube

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Overview of FDP12N60NZ

The FDP12N60NZ is a N-channel MOSFET transistor designed for high-power switching applications. It features a low ON resistance and high switching speed, making it suitable for use in power supplies, motor control, and other power electronics applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the FDP12N60NZ MOSFET for a visual representation.

Key Features

  • High Power Handling: The FDP12N60NZ can handle high power levels, making it suitable for demanding applications.
  • Low ON Resistance: With its low ON resistance, this MOSFET minimizes power losses and improves efficiency.
  • Fast Switching Speed: The high switching speed of the FDP12N60NZ allows for rapid switching in power circuits.
  • High Voltage Capability: This MOSFET can withstand high voltages, making it ideal for high-power applications.
  • Temperature Stability: The FDP12N60NZ exhibits good temperature stability, ensuring reliable performance across varying operating conditions.

Note: For detailed technical specifications, please refer to the FDP12N60NZ datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits due to its high power handling capabilities.
  • Motor Control: Suitable for motor control applications where high-power switching is required.
  • Power Inverters: Used in power inverter circuits for converting DC power to AC power efficiently.

Functionality

The FDP12N60NZ MOSFET transistor is designed to control high-power circuits effectively by providing low ON resistance and high-speed switching capabilities, ensuring efficient power management in various applications.

Usage Guide

  • Gate Drive: Provide the appropriate voltage and current to the gate terminal for proper switching operation.
  • Load Connection: Connect the source terminal to the ground and the drain terminal to the load in the circuit.
  • Heat Dissipation: Ensure proper heat sinking to dissipate heat generated during high-power operation.

Frequently Asked Questions

Q: Can the FDP12N60NZ be used in high-frequency switching applications?
A: Yes, the FDP12N60NZ offers high-speed switching suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the FDP12N60NZ:

  • FDP18N50:A similar N-channel MOSFET with higher power handling capabilities.
  • FDP16N50:An alternative option with lower ON resistance for improved efficiency.
  • FDP10N50NZ:Another MOSFET transistor designed for high-power switching applications.

FDP12N60NZ

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series UniFET-II™ Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1676 pF @ 25 V Power Dissipation (Max) 240W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-220-3 Package / Case TO-220-3
Base Product Number FDP12

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