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FDH210N08

MOSFET 75V, 210A NCH MOSFET

Quantity Unit Price(USD) Ext. Price
1 $5.679 $5.68
200 $2.198 $439.60
450 $2.122 $954.90
900 $2.083 $1,874.70

Inventory:6,926

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for FDH210N08 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDH210N08

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Key Features

  • RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A
  • Low Gate Charge (Typ. 232 nC)
  • Low Crss (Typ. 262 pF)
  • 100% Avalanche Tested
  • Improved dv/dt Capability

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 75 V Id - Continuous Drain Current 210 A
Rds On - Drain-Source Resistance 5.5 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 301 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 462 W Channel Mode Enhancement
Tradename UniFET Series FDH210N08
Brand onsemi / Fairchild Configuration Single
Height 20.82 mm Length 15.87 mm
Product Type MOSFET Factory Pack Quantity 30
Subcategory MOSFETs Width 4.82 mm
Unit Weight 0.211644 oz

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