FDG6318P
Trans MOSFET P-CH 20V 0.5A 6-Pin SC-70 T/R
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.343 | $0.34 |
200 | $0.133 | $26.60 |
500 | $0.128 | $64.00 |
1000 | $0.125 | $125.00 |
Inventory:7,788
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : FDG6318P
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Package/Case : SC-70
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Brands : onsemi
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Components Categories : MOSFET
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Datesheet : FDG6318P DataSheet (PDF)
Overview of FDG6318P
These dual P-Channel logic level enhancement mode MOSFET are produced using ON Semiconductor Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Key Features
- -0.5A, -20V
- RDS(ON) = 780 mΩ @ VGS = -4.5V
- RDS(ON) = 1200 mΩ @ VGS = -2.5V
- Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(th) < 1.5V)
- Compact industry standard SC70-6 surface mountpackage
Application
- This product is general usage and suitable for many different applications.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOT-323-6 |
Transistor Polarity | P-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 500 mA |
Rds On - Drain-Source Resistance | 780 mOhms | Vgs - Gate-Source Voltage | - 12 V, + 12 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 300 mW | Channel Mode | Enhancement |
Series | FDG6318P | Brand | onsemi / Fairchild |
Configuration | Dual | Fall Time | 12 ns |
Forward Transconductance - Min | 1.1 S | Height | 1.1 mm |
Length | 2 mm | Product | MOSFET Small Signal |
Product Type | MOSFET | Rise Time | 12 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 P-Channel | Type | FET |
Typical Turn-Off Delay Time | 6 ns | Typical Turn-On Delay Time | 6 ns |
Width | 1.25 mm | Part # Aliases | FDG6318P_NL |
Unit Weight | 0.000988 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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