TPW2900ENH,L1Q
Trans MOSFET N-CH Si 200V 36A 8-Pin DSOP EP Advance T/R
Inventory:6,555
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : TPW2900ENH,L1Q
-
Package/Case : DSOP-8
-
Brand : Toshiba Semiconductor And Storage
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : TPW2900ENH,L1Q DataSheet (PDF)
-
Series : TPW2900ENH
Overview of TPW2900ENH,L1Q
N-Channel 200 V 33A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | DSOP-8 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 200 V |
| Id - Continuous Drain Current | 36 A | Rds On - Drain-Source Resistance | 29 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 22 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 142 W |
| Channel Mode | Enhancement | Tradename | U-MOSVIII-H |
| Series | TPW2900ENH | Brand | Toshiba |
| Configuration | Single | Fall Time | 12 ns |
| Product Type | MOSFET | Rise Time | 8 ns |
| Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 36 ns |
| Typical Turn-On Delay Time | 20 ns | Unit Weight | 0.003668 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
STP24NF10
This TO-220 packaged STP24NF10 MOSFET transistor has a 26A current handling capability and a maximum voltage of 100V
STP30NF20
N-channel 200V, 0.065 Ohm, 30A, TO-220 STripFET(TM) Power MOSFET
MMBTA42-TP
NPN Silicon High Voltage Transistor
MMSS8050-H-TP
This product features a 25V voltage rating and can support a maximum current of 1500mA
STP70NS04ZC
Trans MOSFET N-CH 33V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
HGTP20N60A4
Switched mode power supply IGBT with 600V rating
HGTP7N60B3D
60W Insulated Gate Bipolar Transistors with 14A current rating and 600V voltage capability in a TO-220AB package
MTP12P10
P Channel TO-220 Power MOSFET capable of handling 12 Amps at 100 Volts
MTP2P50E
Tube packaging for 3-pin (3+Tab) configuration
QK040K7TP
1kV TO-218 100mA 100mA ROHS Triacs
IRFB59N10DPBF
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm
AONS66920
Exclusive to OEMs and CMs
IRF7324PBF
MOSFET Transistor with a Maximum Voltage of 20V and a Current Rating of 9A
IRF9321PBF
IRF9321PBF features P-Channel MOSFET design, Hexfet technology, low 7.2 milliohms resistance, and high 34 nanocoulombs gate charge
NTGS3443T1G
Product Description: 20V P Channel SOT-23-6 MOSFET with 2.2A and 500mW
LM394CH
BJT bipolar transistors LM394CH
MRFE6VP6300HR5
RF MOSFET Transistors VHV6 300W50VISM NI780H-4
FQPF9N50
Power MOSFET with N-Channel, 5.3A, 500V, and 0.73ohm characteristics
2N5551G
The 2N5551G is characterized by its NPN silicon composition, suitable for small signal tasks
BFG135A
Silicon NPN Transistor BFG135A: Tailored for L Band RF applications, this small signal transistor boasts a collector current capability of 0.15A