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HGTP20N60A4

Switched mode power supply IGBT with 600V rating

Quantity Unit Price(USD) Ext. Price
1 $1.020 $1.02
200 $0.395 $79.00
500 $0.381 $190.50
800 $0.375 $300.00

Inventory:6,918

*The price is for reference only.
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Overview of HGTP20N60A4

The HGTP20N60A4 is a cutting-edge IGBT that offers a unique combination of features, making it an ideal choice for high voltage switching applications. By incorporating the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this device delivers superior performance in applications where efficiency is paramount. Its optimized design ensures fast switching speeds, making it suitable for use in UPS systems and welders where quick response times are crucial

Key Features

  • High-Speed Switching : tD = 15ns @ IC = 40A
  • Low Input Current : IIn = 1.5μA at TJ = 125°C
  • Fast Reverse Recovery Time : trr = 25ns at IC = 30A
  • Low Inductive Noise : LIn = 100nH @ TJ = 125°C
  • High-Power Density : PD = 2.5W/cm² at TC = 110°C
  • Ultra-Low Crosstalk : CT = -60 dB @ f = 1 kHz, VI = 10V

Application

  • Finance
  • Security
  • Government

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-220-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 70 A
Pd - Power Dissipation 290 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTP20N60A4
Brand onsemi / Fairchild Continuous Collector Current 70 A
Continuous Collector Current Ic Max 70 A Gate-Emitter Leakage Current +/- 250 nA
Height 9.4 mm Length 10.67 mm
Product Type IGBT Transistors Factory Pack Quantity 800
Subcategory IGBTs Width 4.83 mm
Part # Aliases HGTP20N60A4_NL Unit Weight 0.063493 oz

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