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HGTP7N60B3D

60W Insulated Gate Bipolar Transistors with 14A current rating and 600V voltage capability in a TO-220AB package

Quantity Unit Price(USD) Ext. Price
1 $2.933 $2.93
200 $1.170 $234.00
500 $1.131 $565.50
1000 $1.113 $1,113.00

Inventory:8,718

*The price is for reference only.
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Overview of HGTP7N60B3D

Housed in a TO-220 package, the HGTP7N60B3D is easy to mount and provides efficient heat dissipation to prevent overheating. With a maximum junction temperature of 150°C and built-in protection against overcurrent and overtemperature conditions, this IGBT transistor offers peace of mind when it comes to the safety and longevity of your electronic systems

Key Features

  • Robust package for high stress
  • Low noise and electromagnetic interference
  • Suitable for industrial applications

Application

  • Energy-efficient
  • Automotive systems
  • Advanced technology

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-220-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 14 A
Pd - Power Dissipation 60 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series HGTP7N60B3D
Brand onsemi / Fairchild Continuous Collector Current 14 A
Continuous Collector Current Ic Max 14 A Gate-Emitter Leakage Current +/- 100 nA
Height 9.4 mm Length 10.67 mm
Product Type IGBT Transistors Factory Pack Quantity 400
Subcategory IGBTs Width 4.83 mm
Part # Aliases HGTP7N60B3D_NL Unit Weight 0.063493 oz

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