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TPW1R005PL,L1Q

Meet the demands of modern electronics with these high-reliability

Inventory:7,757

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Overview of TPW1R005PL,L1Q

N-Channel 45 V 300A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series U-MOSIX-H Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 45 V Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9600 pF @ 22.5 V Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance Package / Case DSOP-8
Base Product Number TPW1R005 Manufacturer Toshiba
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 45 V
Id - Continuous Drain Current 300 A Rds On - Drain-Source Resistance 1.65 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.4 V
Qg - Gate Charge 122 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 170 W
Channel Mode Enhancement Tradename U-MOSIX-H
Brand Toshiba Configuration Single
Height 0.73 mm Length 5 mm
Product Type MOSFET Factory Pack Quantity 5000
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 5 mm Unit Weight 0.003668 oz

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