• packageimg
packageimg

STW21NM50N

Tube packaging for STW21NM50N MOSFET transistor

Inventory:9,346

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for STW21NM50N using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of STW21NM50N

The STW21NM50N is an N-channel Power MOSFET designed for high-voltage high-speed switching applications. This MOSFET is part of the MDmesh™ M5 series, offering improved performance and efficiency in power electronic designs.

Pinout

(: The pin configuration below is a general representation. Refer to the specific datasheet for details.)

  • G: Gate
  • D: Drain
  • S Source
  • BVDD: Bootstrap Supply Voltage (for gate driving)

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the STW21NM50N MOSFET for a more visual representation.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-247-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 18 A Rds On - Drain-Source Resistance 150 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 140 W
Channel Mode Enhancement Series STF21NM50N
Brand STMicroelectronics Configuration Single
Fall Time 30 ns Forward Transconductance - Min 12 S
Height 20.15 mm Length 15.75 mm
Product Type MOSFET Rise Time 18 ns
Factory Pack Quantity 600 Subcategory MOSFETs
Transistor Type 1 N-Channel Type Power MOSFET
Typical Turn-Off Delay Time 90 ns Typical Turn-On Delay Time 22 ns
Width 5.15 mm Unit Weight 0.211644 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

SUD50P04-15

SUD50P04-15

replacement MOSFET for 781-SUD50P04-08-GE3
BSM100GAL120DLCK

BSM100GAL120DLCK

Insulated Gate Bipolar Transistor with a maximum collector current of 205A and a breakdown voltage of 1200V
STB80NF55-06

STB80NF55-06

Silicon-based N-channel MOSFET suitable for high-power applications with a voltage rating of 55V
SQ9945BEY-T1-GE3

SQ9945BEY-T1-GE3

Ideal for DC-DC converters, motor drives, and power supplies
FDH15N50

FDH15N50

15A 500V UltraFET N-Channel MOSFET
BSS84PW H6327

BSS84PW H6327

P-Channel 60V 0.15A Automotive MOSFET in SOT-323 Package
2SD2351T106V

2SD2351T106V

50V 150mA NPN BJT transistors
PCP1402-TD-H

PCP1402-TD-H

250V Single N-Channel Power MOSFET, 1.2A, 2.4 Ohm, SOT-89 / PCP-2, 1000-Reel
SI8802DB-T2-E1

SI8802DB-T2-E1

Small-sized MOSFET with 8V Vds and 5V Vgs in 0.8 x 0.8 footprint
2SD2675TL

2SD2675TL

NPN transistor with low VCE(sat)