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STF6N60M2

Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220FP Tube

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Overview of STF6N60M2

The MDmesh™ M2 technology utilized in STF6N60M2 enhances the device's thermal performance, ensuring reliable operation under high temperature conditions. This technology also improves the device's resistance to voltage spikes and other transient events, enhancing its overall robustness and longevity. STF6N60M2 Power MOSFETs provide a reliable and efficient solution for a wide range of power management requirements, offering exceptional performance and durability in demanding environments

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss)profile
  • 100% avalanche tested
  • Zener-protected

Application

  • Switching applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF6N60M2 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 15 Weeks, 5 Days
Samacsys Manufacturer STMicroelectronics Avalanche Energy Rating (Eas) 86 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 1.2 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.7 pF JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 18 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON Manufacturer STMicroelectronics
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 4.5 A Rds On - Drain-Source Resistance 1.2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 8 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 20 W
Channel Mode Enhancement Tradename MDmesh
Series STF6N60M2 Brand STMicroelectronics
Fall Time 22.5 ns Product Type MOSFET
Rise Time 7.4 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel Power MOSFET
Typical Turn-Off Delay Time 24 ns Typical Turn-On Delay Time 9.5 ns
Unit Weight 0.068784 oz

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