SI7613DN-T1-GE3

Name: SI7613DN-T1-GE3
Brand: Siliconix
Rating: 4.5 (10 reviews)

P-Channel MOSFET with a 20V drain-source voltage rating

Quantity	Unit Price(USD)	Ext. Price
1	$0.495	$0.50
10	$0.437	$4.37
30	$0.408	$12.24
100	$0.378	$37.80
500	$0.361	$180.50
1000	$0.351	$351.00

Inventory:6,688

*The price is for reference only.

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Part Number : SI7613DN-T1-GE3
Package/Case : POWERPAK-8
Brand : Siliconix
Components Classification : Single FETs, MOSFETs
Datesheet : SI7613DN-T1-GE3 DataSheet (PDF)
Series : SI7613DN

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Overview of SI7613DN-T1-GE3

The SI7613DN-T1-GE3 is a N-channel MOSFET transistor designed for use in power management and switching applications. This transistor is part of Vishay Silicon PowerPAK® package, which offers high power density and low resistance. It provides efficient performance and reliable operation in various electronic systems.

Key Features

N-Channel MOSFET: SI7613DN-T1-GE3 is an N-channel MOSFET, allows for efficient control of current flow.
Low On-resistance: This transistor has a low-resistance, minimizing power losses and improving overall efficiency.
Fast Switching Speed The SI7613DN-T1-GE3 offers fast switching times, enabling quick response in power management applications.
High Power Density: With its PowerPAK® package, this transistor provides high power density while maintaining low thermal resistance.
Suitable for High-Frequency Applications: The7613DN-T1-GE3 can be used in high-frequency circuits due to its excellent frequency response characteristics.

Frequently Asked Questions

Q: What are the dimensions of the SI7613DN-T1-GE?

A: The dimensions of the SI7614DN-T1-EH are 5mm x 6mm x 0.8mm (LxWxH).

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category	MOSFET	RoHS	Details
REACH	Details	Technology	Si
Mounting Style	SMD/SMT	Package / Case	PowerPAK-1212-8
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V	Id - Continuous Drain Current	35 A
Rds On - Drain-Source Resistance	14 mOhms	Vgs - Gate-Source Voltage	- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage	2.2 V	Qg - Gate Charge	87 nC
Minimum Operating Temperature	- 50 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	52.1 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI7
Brand	Vishay Semiconductors	Configuration	Single
Fall Time	13 ns	Forward Transconductance - Min	40 S
Height	1.04 mm	Length	3.3 mm
Product Type	MOSFET	Rise Time	40 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	41 ns
Typical Turn-On Delay Time	43 ns	Width	3.3 mm
Part # Aliases	SI7613DN-GE3	Unit Weight	0.032487 oz

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