IRFR9310TRPBF
MOSFET P-Chan 400V 1.8 Amp
Inventory:6,276
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Part Number : IRFR9310TRPBF
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Package/Case : DPAK-3
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : IRFR9310TRPBF DataSheet (PDF)
The IRFR9310TRPBF is an N-channel Power MOSFET designed for various switching applications. It features a low on-state resistance and high-speed switching capability, making it suitable for power management in diverse electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRFR9310TRPBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRFR9310TRPBF datasheet. Functionality The IRFR9310TRPBF N-channel MOSFET facilitates efficient switching operations in electronic circuits, ensuring reliable power management and control. Usage Guide Q: Is the IRFR9310TRPBF suitable for high-frequency applications? For similar functionalities, consider these alternatives to the IRFR9310TRPBF:Overview of IRFR9310TRPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the IRFR9310TRPBF offers high-speed switching capability, making it suitable for high-frequency switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | DPAK-3 (TO-252-3) |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 400 V | Id - Continuous Drain Current | 1.8 A |
Rds On - Drain-Source Resistance | 7 Ohms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 13 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 50 W | Channel Mode | Enhancement |
Series | IRFR/U | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 24 ns |
Forward Transconductance - Min | 0.91 S | Product Type | MOSFET |
Rise Time | 10 ns | Factory Pack Quantity | 2000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 11 ns |
Unit Weight | 0.011640 oz |
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