STF33N65M2
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220FP Tube
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.420 | $2.42 |
10 | $2.106 | $21.06 |
30 | $1.908 | $57.24 |
100 | $1.706 | $170.60 |
500 | $1.541 | $770.50 |
1000 | $1.500 | $1,500.00 |
Inventory:3,996
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Part Number : STF33N65M2
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Package/Case : TO-220FP
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Brand : ST
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Components Classification : Single FETs, MOSFETs
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Datesheet : STF33N65M2 DataSheet (PDF)
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Series : STF33N65M2
Overview of STF33N65M2
The STF33N65M2 Power MOSFETs stand out for their advanced MDmesh™ M2 technology, which enhances their performance and efficiency. With a unique strip layout and improved vertical structure, these devices offer low on-resistance and optimized switching characteristics. This makes them ideal for high efficiency converters that require reliable and responsive power control
Key Features
- Sophisticated design architecture
- Low power consumption profile
- Robustness against latch-up
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STF33N65M2 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Package Description | TO-220FP, 3 PIN |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 52 Weeks | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 780 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
Drain Current-Max (Abs) (ID) | 24 A | Drain Current-Max (ID) | 24 A |
Drain-source On Resistance-Max | 0.14 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 34 W | Pulsed Drain Current-Max (IDM) | 96 A |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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