BC846BQ-7-F
It features a compact SOT-23 package
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.045 | $0.45 |
100 | $0.038 | $3.80 |
300 | $0.034 | $10.20 |
3000 | $0.030 | $90.00 |
6000 | $0.028 | $168.00 |
9000 | $0.027 | $243.00 |
Inventory:6,089
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Part Number : BC846BQ-7-F
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Package/Case : TO236-3
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Brand : Diodes Incorporated
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Components Classification : Single Bipolar Transistors
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Datesheet : BC846BQ-7-F DataSheet (PDF)
The BC846BQ-7-F is a general-purpose NPN transistor in a SOT-23 package. It is designed for use in amplification and switching applications in various electronic circuits, providing versatile functionality in a compact form factor. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the BC846BQ-7-F transistor for a visual representation. Note: For detailed technical specifications, please refer to the BC846BQ-7-F datasheet. Functionality The BC846BQ-7-F NPN transistor is designed to amplify and switch electronic signals, offering reliable performance in various electronic applications. Usage Guide Q: What is the maximum power handling capacity of the BC846BQ-7-F? Q: Is the BC846BQ-7-F suitable for audio amplification? For similar functionalities, consider these alternatives to the BC846BQ-7-F:Overview of BC846BQ-7-F
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The BC846BQ-7-F is capable of handling medium power levels, suitable for a wide range of electronic applications.
A: Yes, the BC846BQ-7-F can be used in audio amplification circuits and other signal amplification applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 65 V |
Collector- Base Voltage VCBO | 80 V | Emitter- Base Voltage VEBO | 6 V |
Collector-Emitter Saturation Voltage | 200 mV | Maximum DC Collector Current | 100 mA |
Pd - Power Dissipation | 310 mW | Gain Bandwidth Product fT | 300 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Brand | Diodes Incorporated | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | Subcategory | Transistors |
Technology | Si |
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