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IXFN210N20P

IXFN210N20P, classified as a Power Field-Effect Transistor, boasts a high current rating of 188A and a voltage tolerance of 200V

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Overview of IXFN210N20P

The IXFN210N20P is a high-performance power MOSFET designed for various power switching applications. It features a low on-state resistance, high current capability, and ruggedized design, making it suitable for demanding industrial and automotive applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • V: Source
  • S: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN210N20P MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IXFN210N20P offers a low on-state resistance, minimizing power losses in high-current applications.
  • High Current Capability: With its high current handling capacity, this MOSFET is capable of driving heavy loads in power circuits.
  • Ruggedized Design: The rugged construction and robust design ensure reliable performance in harsh environments and demanding operating conditions.
  • High Switching Speed: This MOSFET features high switching speeds, enabling efficient power control and regulation.
  • Low Input and Output Capacitance: The low input and output capacitance characteristics contribute to improved switching performance and reduced power dissipation.

Note: For detailed technical specifications, please refer to the IXFN210N20P datasheet.

Application

  • Power Inverters: Ideal for use in power inverter applications for converting DC power to AC power.
  • Motor Drives: Suitable for motor drive circuits in industrial and automotive systems, providing efficient power management.
  • Switching Power Supplies: Used in switching power supply designs for regulating and controlling power distribution.

Functionality

The IXFN210N20P power MOSFET is designed to efficiently switch and control high-power circuits, making it a versatile and reliable component for various power electronics applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuitry for controlling the MOSFET switching.
  • Source and Drain Connections: Connect the source (V) and drain (S) pins according to the circuit requirements for power flow regulation.

Frequently Asked Questions

Q: Can the IXFN210N20P withstand high temperature environments?
A: Yes, the IXFN210N20P is designed to operate reliably in high temperature conditions, making it suitable for rugged industrial and automotive applications.

Equivalent

For similar functionalities, consider these alternatives to the IXFN210N20P:

  • IXFN240N10: A high-performance power MOSFET with similar characteristics and performance ratings.
  • IXFN170N10: This power MOSFET offers comparable current handling and rugged design suitable for demanding applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 200 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0105
Continuous Drain Current @ 25 ℃ (A) 188 Gate Charge (nC) 255
Input Capacitance, CISS (pF) 18600 Thermal resistance [junction-case] (K/W) 0.14
Configuration Single Package Type SOT-227
Power Dissipation (W) 1070 Maximum Reverse Recovery (ns) 200
Sample Request Yes Check Stock Yes

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