IXFN210N20P
IXFN210N20P, classified as a Power Field-Effect Transistor, boasts a high current rating of 188A and a voltage tolerance of 200V
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Part Number : IXFN210N20P
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Package/Case : SOT-227-4
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXFN210N20P DataSheet (PDF)
The IXFN210N20P is a high-performance power MOSFET designed for various power switching applications. It features a low on-state resistance, high current capability, and ruggedized design, making it suitable for demanding industrial and automotive applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXFN210N20P MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IXFN210N20P datasheet. Functionality The IXFN210N20P power MOSFET is designed to efficiently switch and control high-power circuits, making it a versatile and reliable component for various power electronics applications. Usage Guide Q: Can the IXFN210N20P withstand high temperature environments? For similar functionalities, consider these alternatives to the IXFN210N20P:Overview of IXFN210N20P
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the IXFN210N20P is designed to operate reliably in high temperature conditions, making it suitable for rugged industrial and automotive applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 200 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.0105 |
Continuous Drain Current @ 25 ℃ (A) | 188 | Gate Charge (nC) | 255 |
Input Capacitance, CISS (pF) | 18600 | Thermal resistance [junction-case] (K/W) | 0.14 |
Configuration | Single | Package Type | SOT-227 |
Power Dissipation (W) | 1070 | Maximum Reverse Recovery (ns) | 200 |
Sample Request | Yes | Check Stock | Yes |
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