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SQ2398ES-T1_GE3

MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified

Inventory:8,534

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Overview of SQ2398ES-T1_GE3

N-Channel 100 V 1.6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

Key Features

  • TrenchFET® power MOSFET
  • AEC-Q101 qualified c
  • 100 % Rg and UIS tested

    • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Manufacturer Vishay Product Category MOSFET
    RoHS Details Technology Si
    Mounting Style SMD/SMT Package / Case SOT-23-3
    Transistor Polarity N-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 1.6 A
    Rds On - Drain-Source Resistance 300 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
    Vgs th - Gate-Source Threshold Voltage 3.5 V Qg - Gate Charge 2.3 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
    Pd - Power Dissipation 2 W Channel Mode Enhancement
    Qualification AEC-Q101 Tradename TrenchFET
    Series SQ Brand Vishay Semiconductors
    Configuration Single Fall Time 17 ns
    Product Type MOSFET Rise Time 18 ns
    Factory Pack Quantity 3000 Subcategory MOSFETs
    Transistor Type 1 N-Channel Typical Turn-Off Delay Time 7 ns
    Typical Turn-On Delay Time 5 ns Part # Aliases SQ2398ES-T1_BE3
    Unit Weight 0.000282 oz

    Warranty & Returns

    Warranty, Returns, and Additional Information

    • QA & Return Policy

      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

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