• packageimg
packageimg

SQM120P06-07L_GE3

VISHAY - SQM120P06-07L_GE3 - MOSFET, AEC-Q101, P-CH, -60V, -120A

Inventory:5,183

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for SQM120P06-07L_GE3 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SQM120P06-07L_GE3

The SQM120P06-07L_GE3 is a 60V P-Channel enhancement mode power MOSFET designed for high-power switching applications.This MOSFET features a low on-resistance and high current capability,making it suitable for power management in various electronic devices.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SQM120P06-07L_GE3 MOSFET for a visual representation.

Key Features

  • P-Channel Enhancement Mode: The SQM120P06-07L_GE3 operates in the enhancement mode, allowing for efficient power control.
  • Low On-Resistance: This MOSFET offers low on-resistance for minimal power dissipation and high efficiency.
  • High Current Capability: With its high current handling capacity, the SQM120P06-07L_GE3 can support demanding load requirements.
  • Fast Switching Speed: The MOSFET provides fast switching characteristics, ensuring quick response times in power applications.
  • High Power Dissipation: Designed for high-power applications, the SQM120P06-07L_GE3 can handle significant power levels.

Note: For detailed technical specifications, please refer to the SQM120P06-07L_GE3 datasheet.

Application

  • Power Management: Ideal for power management applications in electronic devices such as power supplies and motor control systems.
  • Switching Circuits: Suitable for use in high-power switching circuits requiring efficient and reliable MOSFETs.
  • Voltage Regulation: The SQM120P06-07L_GE3 can be utilized in voltage regulation circuits to control and stabilize output voltages.

Functionality

The SQM120P06-07L_GE3 is a P-Channel enhancement mode power MOSFET that enables efficient power control with its low on-resistance and high current capability. It serves as a reliable solution for power management and switching applications.

Usage Guide

  • Gate Connection: Connect the Gate (G) pin to the control signal to switch the MOSFET on and off.
  • Drain and Source: Connect the load between the Drain (D) and Source (S) pins to control the power flow.
  • Heat Dissipation: Ensure proper heat sinking to manage the power dissipation and prevent overheating during operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the SQM120P06-07L_GE3?
A: The SQM120P06-07L_GE3 is rated for a maximum voltage of 60V, suitable for various high-power applications.

Q: Can the SQM120P06-07L_GE3 be used for motor control?
A: Yes, the high current capability and fast switching speed of the SQM120P06-07L_GE3 make it suitable for motor control applications requiring efficient power handling.

Equivalent

For similar functionalities, consider these alternatives to the SQM120P06-07L_GE3:

  • IXTH10N60: A similar P-Channel MOSFET with comparable specifications for power management applications.
  • FDP8878: This MOSFET offers enhanced performance characteristics for high-power switching circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 120 A
Rds On - Drain-Source Resistance 6.7 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.5 V Qg - Gate Charge 180 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 375 W Channel Mode Enhancement
Qualification AEC-Q101 Tradename TrenchFET
Series SQ Brand Vishay / Siliconix
Configuration Single Fall Time 32 ns
Forward Transconductance - Min 90 S Height 4.83 mm
Length 10.67 mm Product Type MOSFET
Rise Time 23 ns Factory Pack Quantity 800
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 97 ns Typical Turn-On Delay Time 15 ns
Width 9.65 mm Unit Weight 0.139332 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.