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SIHD186N60EF-GE3

Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) TO-252

Inventory:4,131

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Overview of SIHD186N60EF-GE3

Key Features

  • 4th generation E series technology
  • Low figure-of-merit (FOM) Ron x Qg
  • Low effective capacitance (Co(er))
  • Reduced switching and conduction losses
  • Avalanche energy rated (UIS)

    • Application

    • oServer and telecom power supplies
    • oSwitch mode power supplies (SMPS)
    • oPower factor correction power supplies (PFC)
    • oLighting
    • oHigh-intensity discharge (HID)
    • oFluorescent ballast lighting
    • oIndustrial
    • oWelding
    • oInduction heating
    • oMotor drives
    • oBattery chargers
    • oSolar (PV inverters)

    Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Product Category MOSFET RoHS Details
    Technology Si Mounting Style SMD/SMT
    Package / Case DPAK-3 (TO-252-3) Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
    Id - Continuous Drain Current 19 A Rds On - Drain-Source Resistance 201 mOhms
    Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V
    Qg - Gate Charge 21 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 156 W
    Channel Mode Enhancement Series EF
    Brand Vishay Semiconductors Configuration Single
    Fall Time 7 ns Forward Transconductance - Min 6.5 S
    Product Type MOSFET Rise Time 32 ns
    Factory Pack Quantity 3000 Subcategory MOSFETs
    Transistor Type 1 N-Channel Typical Turn-Off Delay Time 24 ns
    Typical Turn-On Delay Time 17 ns Unit Weight 0.011640 oz

    Warranty & Returns

    Warranty, Returns, and Additional Information

    • QA & Return Policy

      Parts Quality Guarantee: 365 days

      Returns for refund: within 90 days

      Returns for Exchange: within 90 days

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