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SIS414DN-T1-GE3

Product Description: MOSFET SIS414DN-T1-GE3, with recommended alternative 78-SISA88DN-T1-GE3

Quantity Unit Price(USD) Ext. Price
1 $1.446 $1.45
10 $1.417 $14.17
30 $1.396 $41.88
100 $1.376 $137.60

Inventory:7,820

*The price is for reference only.
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Overview of SIS414DN-T1-GE3

The SIS414DN-T1-GE3 is a power MOSFET designed for high-performance switching applications. It features a low on-state resistance and fast switching speed, making it ideal for power management and DC-DC converter circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for controlling the MOSFET
  • D: Drain terminal for the power connection
  • S: Source terminal for the power connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SIS414DN-T1-GE3 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The SIS414DN-T1-GE3 offers a low RDS(ON) for efficient power conduction.
  • Fast Switching Speed: This MOSFET provides rapid switching characteristics, minimizing switching losses in power circuits.
  • High Power Dissipation: With its design, the SIS414DN-T1-GE3 can handle significant power dissipation in demanding applications.
  • High Temperature Capability: The MOSFET is capable of operating at elevated temperatures, enabling use in high-temperature environments.

Note: For detailed technical specifications, please refer to the SIS414DN-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power management circuits in various electronic devices and systems.
  • DC-DC Converters: Suitable for use in DC-DC converter modules for efficient power conversion.
  • Motor Control: Can be employed in motor control circuits for effective power switching and control.

Functionality

The SIS414DN-T1-GE3 power MOSFET offers efficient power switching capabilities, making it suitable for power management, conversion, and control applications.

Usage Guide

  • G - Connect to the control signal for switching the MOSFET on and off.
  • D - Connect to the power supply or load for power conduction.
  • S - Connect to the ground or common reference point.

Frequently Asked Questions

Q: Can the SIS414DN-T1-GE3 be used in automotive applications?
A: Yes, the SIS414DN-T1-GE3 is suitable for automotive power management and control due to its high-temperature capability and efficient switching characteristics.

Equivalent

For similar functionalities, consider these alternatives to the SIS414DN-T1-GE3:

  • IRF3205: A power MOSFET with comparable performance characteristics suitable for high-power applications.
  • FQP30N06L: This MOSFET provides similar power switching capabilities and is suitable for power management and conversion.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-1212-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 20 A Rds On - Drain-Source Resistance 16 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 600 mV
Qg - Gate Charge 22 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 31 W
Channel Mode Enhancement Tradename TrenchFET, PowerPAK
Series SIS Brand Vishay / Siliconix
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 50 S Height 1.04 mm
Length 3.3 mm Product Type MOSFET
Rise Time 54 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 26 ns Typical Turn-On Delay Time 12 ns
Width 3.3 mm Part # Aliases SIS414DN-GE3
Unit Weight 0.032487 oz

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