SIS414DN-T1-GE3
Product Description: MOSFET SIS414DN-T1-GE3, with recommended alternative 78-SISA88DN-T1-GE3
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.446 | $1.45 |
10 | $1.417 | $14.17 |
30 | $1.396 | $41.88 |
100 | $1.376 | $137.60 |
Inventory:7,820
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Part Number : SIS414DN-T1-GE3
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Package/Case : POWERPAK-1212
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : SIS414DN-T1-GE3 DataSheet (PDF)
The SIS414DN-T1-GE3 is a power MOSFET designed for high-performance switching applications. It features a low on-state resistance and fast switching speed, making it ideal for power management and DC-DC converter circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SIS414DN-T1-GE3 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SIS414DN-T1-GE3 datasheet. Functionality The SIS414DN-T1-GE3 power MOSFET offers efficient power switching capabilities, making it suitable for power management, conversion, and control applications. Usage Guide Q: Can the SIS414DN-T1-GE3 be used in automotive applications? For similar functionalities, consider these alternatives to the SIS414DN-T1-GE3:Overview of SIS414DN-T1-GE3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SIS414DN-T1-GE3 is suitable for automotive power management and control due to its high-temperature capability and efficient switching characteristics.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-1212-8 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 20 A | Rds On - Drain-Source Resistance | 16 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 600 mV |
Qg - Gate Charge | 22 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 31 W |
Channel Mode | Enhancement | Tradename | TrenchFET, PowerPAK |
Series | SIS | Brand | Vishay / Siliconix |
Configuration | Single | Fall Time | 10 ns |
Forward Transconductance - Min | 50 S | Height | 1.04 mm |
Length | 3.3 mm | Product Type | MOSFET |
Rise Time | 54 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 26 ns | Typical Turn-On Delay Time | 12 ns |
Width | 3.3 mm | Part # Aliases | SIS414DN-GE3 |
Unit Weight | 0.032487 oz |
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