SI7439DP-T1-E3

Name: SI7439DP-T1-E3
Brand: Siliconix
Rating: 4.5 (10 reviews)

The SI7439DP-T1-E3, from the Si7439DP Series, is a P-channel MOSFET engineered for surface-mount applications

Quantity	Unit Price(USD)	Ext. Price
1	$2.606	$2.61
200	$1.010	$202.00
500	$0.974	$487.00
1000	$0.955	$955.00

Inventory:8,428

*The price is for reference only.

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Part Number : SI7439DP-T1-E3
Package/Case : PowerPAKSO-8
Brand : Siliconix
Components Classification : Single FETs, MOSFETs
Datesheet : SI7439DP-T1-E3 DataSheet (PDF)

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Overview of SI7439DP-T1-E3

The SI7439DP-T1-E3 is a dual power MOSFET IC designed for high-frequency, high-efficiency synchronous buck converters and power management applications. It features low ON-resistance and high current-carrying capability, making it ideal for voltage regulation and power delivery in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

PH: High-Side Power Input
PL: Low-Side Power Input
SS: Soft-Start Pin
FB: Feedback Pin
EN: Enable Pin
PGND: Power Ground
PGND: Power Ground
LX: Switching Node
VCC: Control Circuit Power Supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7439DP-T1-E3 IC for a visual representation.

Key Features

Dual Power MOSFET: Integrates two power MOSFETs in a single package for synchronous operation in buck converters.
Low ON-Resistance: Provides efficient power delivery with minimal voltage drop across the MOSFETs.
High Current Capability: Capable of handling high continuous and peak currents for demanding applications.
Soft-Start Function: Includes a soft-start pin for controlled startup and reduced inrush current during power-up.
Enable Input: Features an enable pin for on/off control of the device, allowing for power management flexibility.
Compact Package: Available in a compact and thermally efficient package for space-constrained designs.

Note: For detailed technical specifications, please refer to the SI7439DP-T1-E3 datasheet.

Application

DC-DC Converters: Ideal for use in synchronous buck converters for efficient voltage regulation.
Power Management: Suitable for power management applications in electronic devices and systems.
Voltage Regulation: Used for delivering regulated power to various components and subsystems in electronic circuits.

Functionality

The SI7439DP-T1-E3 is a dual power MOSFET designed for synchronous buck converters and power management applications. It provides efficient power delivery and control for various electronic systems.

Usage Guide

Power Connections: Connect the high-side (PH) and low-side (PL) power inputs to the respective power sources.
Control Inputs: Utilize the soft-start (SS), feedback (FB), and enable (EN) pins for controlled operation and power management.
Switching Node: Connect external components and loads to the LX switching node for regulated power delivery.

Frequently Asked Questions

Q: What is the maximum current rating of the SI7439DP-T1-E3?
A: The SI7439DP-T1-E3 is capable of handling high continuous and peak currents for demanding applications.

Q: Is the SI7439DP-T1-E3 suitable for voltage regulation in battery-powered devices?
A: Yes, the low ON-resistance and high efficiency make the SI7439DP-T1-E3 suitable for efficient voltage regulation in battery-powered applications.

Equivalent

For similar functionalities, consider these alternatives to the SI7439DP-T1-E3:

SI7438DP-T1-E3: This is a similar dual power MOSFET IC from Vishay, offering comparable performance and characteristics.
IRF6795MTRPBF: This dual power MOSFET from Infineon provides similar features and is suitable for high-frequency synchronous buck converters.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	PowerPAK-SO-8	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	5.2 A	Rds On - Drain-Source Resistance	90 mOhms
Vgs - Gate-Source Voltage	+ 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	88 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	5.4 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI7	Brand	Vishay Semiconductors
Configuration	Single	Fall Time	64 ns
Forward Transconductance - Min	19 S	Height	1.04 mm
Length	6.15 mm	Product Type	MOSFET
Rise Time	46 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	115 ns	Typical Turn-On Delay Time	25 ns
Width	5.15 mm	Part # Aliases	SI7439DP-E3
Unit Weight	0.017870 oz

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