STP22NE10L
With a TO-220AB packaging
Inventory:9,263
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Part Number : STP22NE10L
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Package/Case : TO220-3
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Brand : Stmicroelectronics
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Components Classification : Single FETs, MOSFETs
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Datesheet : STP22NE10L DataSheet (PDF)
The STP22NE10L is an N-channel Power MOSFET designed for high-power switching applications. It features a low on-resistance and high operating voltage, making it suitable for use in power supplies, motor control, and other power electronics applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the STP22NE10L MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the STP22NE10L datasheet. Functionality The STP22NE10L is an N-channel Power MOSFET that provides efficient power switching capabilities for various high-power applications. Usage Guide Q: What is the maximum operating voltage for the STP22NE10L? Q: Is the STP22NE10L suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the STP22NE10L:Overview of STP22NE10L
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The STP22NE10L can operate at voltages up to X volts.
A: Yes, the STP22NE10L offers fast switching speeds, making it suitable for high-frequency applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 22 A |
Rds On - Drain-Source Resistance | 85 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 90 W | Channel Mode | Enhancement |
Series | MDmesh K5 | Brand | STMicroelectronics |
Configuration | Single | Fall Time | 12 ns |
Forward Transconductance - Min | 19 S | Height | 9.15 mm |
Length | 10.4 mm | Product Type | MOSFET |
Rise Time | 80 ns | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 45 ns | Typical Turn-On Delay Time | 40 ns |
Width | 4.6 mm | Unit Weight | 0.068784 oz |
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