SI7431DP-T1-E3
MOSFET -200V Vds 20V Vgs PowerPAK SO-8 2.2A (Ta) 1.9W (Ta) Surface Mount
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Part Number : SI7431DP-T1-E3
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Package/Case : PowerPAKSO-8
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : SI7431DP-T1-E3 DataSheet (PDF)
The SI7431DP-T1-E3 is a high-side switch with integrated protection features, designed for use in automotive and industrial applications. It provides a compact and efficient solution for controlling high-side loads in a variety of systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SI7431DP-T1-E3 for a visual representation. Note: For detailed technical specifications, please refer to the SI7431DP-T1-E3 datasheet. Functionality The SI7431DP-T1-E3 acts as a high-side switch with integrated protection, providing safe and reliable control of high-side loads in automotive and industrial systems. Usage Guide Q: What is the maximum input voltage supported by the SI7431DP-T1-E3? Q: Does the SI7431DP-T1-E3 provide thermal protection? For similar functionalities, consider these alternatives to the SI7431DP-T1-E3:Overview of SI7431DP-T1-E3
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The SI7431DP-T1-E3 can accommodate input voltages within the specified operating range, typically up to 40V.
A: Yes, the SI7431DP-T1-E3 includes thermal shutdown protection to safeguard against overtemperature conditions.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | PowerPAK-SO-8 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 200 V |
Id - Continuous Drain Current | 3.8 A | Rds On - Drain-Source Resistance | 174 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 135 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 5.4 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI7 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 66 ns |
Forward Transconductance - Min | 17 S | Height | 1.04 mm |
Length | 6.15 mm | Product Type | MOSFET |
Rise Time | 49 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 110 ns | Typical Turn-On Delay Time | 23 ns |
Width | 5.15 mm | Part # Aliases | SI7431DP-E3 |
Unit Weight | 0.017870 oz |
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Warranty, Returns, and Additional Information
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