SI7157DP-T1-GE3

The SI7157DP-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET in a PowerPAK® SO-8L package. It is designed for various power management applications where high efficiency and compact size are required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• Pin 1: Source of MOSFET 1
• Pin 2: Gate of MOSFET 1
• Pin 3: Source of MOSFET 2
• Pin 4: Gate of MOSFET 2
• Pin 5: Drain of MOSFET 2
• Pin 6: Drain of MOSFET 1
• Pin 7: GND
• Pin 8: VCC

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7157DP-T1-GE3 MOSFET for a visual representation.

Key Features

• Dual N-Channel MOSFET: Provides two N-channel MOSFETs for efficient power management.
• High Voltage Rating: Supports up to 30V drain-source voltage, suitable for various applications.
• Compact Package: Housed in a PowerPAK® SO-8L package for space-saving designs.
• Low RDS(on): Features low on-resistance for minimal power loss and high efficiency.
• Wide Operating Temperature Range: Suitable for operation across a range of temperature conditions.

Note: For detailed technical specifications, please refer to the SI7157DP-T1-GE3 datasheet.

Application

• Power Management Systems: Ideal for use in power management systems in various electronic devices.
• DC-DC Converters: Suitable for DC-DC converter applications requiring efficient power switching.
• Battery Protection Circuits: Provides effective switching for battery protection circuitry.

Functionality

The SI7157DP-T1-GE3 is a dual N-channel MOSFET designed for power management applications, offering high efficiency and performance.

Usage Guide

• Source Connections: Connect the source pins of the MOSFETs to the appropriate circuit grounds.
• Gate Control: Apply the necessary gate voltages to control the switching of the MOSFETs.
• Load Connections: Connect the drain pins to the loads for power switching operations.