IXFT16N120P
MOSFET featuring 16 Amps current, 1200V voltage, and 1 ohm Rds
Inventory:6,163
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IXFT16N120P
-
Package/Case : TO-268-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : IXFT16N120P DataSheet (PDF)
-
Series : IXFT16N120
The IXFT16N120P is a power MOSFET transistor designed for high-power switching applications.This MOSFET features a voltage rating of 1200V and a continuous current rating of 16A,making it suitable for various power electronics applications. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXFT16N120P MOSFET for a visual representation. Note:For detailed technical specifications, please refer to the IXFT16N120P datasheet. Functionality The IXFT16N120P MOSFET is designed for high-power switching applications, offering reliable and efficient performance in power electronics circuits. Usage Guide Q: What is the maximum voltage rating of the IXFT16N120P? Q: Can the IXFT16N120P be used in high-current applications? For similar functionalities, consider these alternatives to the IXFT16N120P:Overview of IXFT16N120P
Pinout
Circuit DiagramKey Features
Application
Frequently Asked Questions
A: The IXFT16N120P has a maximum voltage rating of 1200V, allowing it to handle high-voltage applications.
A: Yes, the IXFT16N120P is rated for a continuous current of 16A, making it suitable for high-power applications requiring significant current handling capability.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 1200 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.95 |
Continuous Drain Current @ 25 ℃ (A) | 16 | Gate Charge (nC) | 120 |
Input Capacitance, CISS (pF) | 6900 | Thermal resistance [junction-case] (K/W) | 0.19 |
Configuration | Single | Package Type | TO-268S |
Power Dissipation (W) | 660 | Maximum Reverse Recovery (ns) | 300 |
Sample Request | No | Check Stock | Yes |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![IXFB100N50P](/files/uploads/product/s/d41d9992ca594ed88ea6f863c3bb11f4.webp)
IXFB100N50P
High-power N-channel MOSFET with 3+Tab Pin Configuration
![IXFH44N50P](/files/uploads/product/s/76d41e9fb68f47e6acc0d0f14f105b9f.webp)
IXFH44N50P
44A, 500V N-channel transistor with TO-247AD packaging
![IXFX180N25T](/files/uploads/product/s/fce1751c-4c05-4474-12e2-08dbc6589f1f.webp)
IXFX180N25T
MOSFET Discrete Component with 180A current capability and 250V voltage rating
![IXFX48N50Q](/files/uploads/product/s/c111d61187dc40ca8ecfa6164c5648c2.webp)
IXFX48N50Q
Transistor MOSFET, N-Type, Capable of Handling 500 Volts and 48 Amps, Encased in TO-247 Package
![IXTA10P50P](/files/uploads/product/s/8054a279f41a45c4a3b0479fc733bace.webp)
IXTA10P50P
Ready to Ship within 1 Day
![IXTP80N10T](/files/uploads/product/s/710ab91dcebf4c3db92bb194c3a5edd9.webp)
IXTP80N10T
MOSFET with 80 Amps and 100V, featuring a Rds of 13.0 for high performance
![IXKR25N80C](/files/uploads/product/s/f8d09721-af36-493e-ce33-08dbc6589f1f.webp)
IXKR25N80C
Three-pin N-channel MOSFET with 800V and 25A rating
![IXFK94N50P2](/files/uploads/product/s/7b0c02188148464b8acac3f38655a7a7.webp)
IXFK94N50P2
Trans MOSFET N-CH 500V 94A 3-Pin(3+Tab) TO-264
![IXTN110N20L2](/files/uploads/product/s/8d573de33a5c45f9bc9d639282027e4d.webp)
IXTN110N20L2
SOT227B-packaged single transistor module engineered for 200V operation and 100A current handling
![IXTP96P085T](/files/uploads/product/s/88b82cf69b8d41fbb118025b6f54baeb.webp)
IXTP96P085T
Metal-oxide Semiconductor FET, P-Channel, 96A Drain Current, 85V Voltage, 0.013ohm On-State Resistance, TO-220AB Housing
![MRF1550NT1](/img/package/to3.jpg)
MRF1550NT1
Si N-Channel RF Power MOSFET for VHF Band
![SUD10P06-280L-E3](/img/package/dpak.jpg)
SUD10P06-280L-E3
P-Channel MOSFET 60V 10A TO-252 Pb-Free
![STP14NK50ZFP](/img/package/to-220f.jpg)
STP14NK50ZFP
Introducing the STP14NK50ZFP: A high-performance N-channel MOSFET with a robust 500V voltage tolerance, low 0
![BSM100GB120DLC](/img/package/module.jpg)
BSM100GB120DLC
BSM100GB120DLC is a dual IGBT module with a voltage rating of 1200V and a current rating of 100A
![SI9410DY](/img/package/soic8.jpg)
SI9410DY
Small signal field-effect transistor with N-channel configuration and 1-element design
![MRF587](/img/product.png)
MRF587
NPN type, capable of handling high currents and voltages ( character
![SQM120P06-07L-GE3](/img/package/to263.jpg)
SQM120P06-07L-GE3
MOSFET 60 V 120A 375 W
![MJ14002G](/img/package/to-3.jpg)
MJ14002G
80V NPN Bipolar Junction Transistor with 60A Collector Current and 300000mW Power Dissipation TO-204 Tray
![2SK3018-TP](/img/package/sot23.jpg)
2SK3018-TP
N-Channel Field-Effect Transistor
![BC857C-7-F](/img/package/sot23.jpg)
BC857C-7-F
Bipolar transistor with PNP technology in a SOT-23 packaging