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SI3443CDV-T1-E3

MOSFET with a Vds of -20V and Vgs of 12V in a TSOP-6 package

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Overview of SI3443CDV-T1-E3

P-Channel 20 V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOP-6 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 5.97 A Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 7.53 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 3.2 W
Channel Mode Enhancement Tradename TrenchFET
Series SI3 Brand Vishay Semiconductors
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Part # Aliases SI3443CDV-T1-BE3 SI3443CDV-E3
Unit Weight 0.000705 oz

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