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IRG4PC40SPBF

IGBTs 160W 60A 600V TO-247AC ROHS

Quantity Unit Price(USD) Ext. Price
1 $2.651 $2.65
200 $1.027 $205.40
500 $0.991 $495.50
1000 $0.972 $972.00

Inventory:7,712

*The price is for reference only.
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Overview of IRG4PC40SPBF

The IRG4PC40SPBF is a high power IGBT (Insulated Gate Bipolar Transistor) designed for use in power electronics applications. It features a high voltage, high speed switching capability, making it suitable for high power switching applications such as motor controls, inverters, and power supplies.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • C: Collector
  • E: Emitter
  • G: Gate
  • VCE: Collector-Emitter Voltage
  • VGE: Gate-Emitter Voltage
  • IC: Collector Current
  • IG: Gate Current

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRG4PC40SPBF IGBT for a visual representation.

Key Features

  • High Power IGBT: The IRG4PC40SPBF is designed to handle high power levels, making it suitable for demanding applications.
  • High Voltage Capability: This IGBT can withstand high voltage levels, enabling use in high voltage circuits.
  • High Speed Switching: With its fast switching capabilities, the IRG4PC40SPBF is ideal for applications requiring rapid switching.
  • Robust Construction: The IGBT is built to withstand high temperatures and harsh operating conditions, ensuring long-term reliability.
  • Overcurrent Protection: Includes built-in protection features to safeguard the device and connected components from overcurrent conditions.

Note: For detailed technical specifications, please refer to the IRG4PC40SPBF datasheet.

Application

  • Motor Drives: Ideal for motor control applications due to its high power handling capability.
  • Power Inverters: Suitable for use in power inverters to convert DC power to AC power efficiently.
  • Induction Heating: Used in high-frequency induction heating systems for rapid heating processes.

Functionality

The IRG4PC40SPBF operates as a high power IGBT, allowing for efficient and controlled switching of high power loads in various applications. It provides reliable performance in demanding environments.

Usage Guide

  • Power Connections: Connect the Collector (C), Emitter (E), and Gate (G) pins following the circuit requirements.
  • Gate Control: Apply the Gate-Emitter Voltage (VGE) to control the switching behavior of the IGBT.
  • Heat Management: Proper heat sinking is essential to ensure the IGBT operates within safe temperature limits.

Frequently Asked Questions

Q: Can the IRG4PC40SPBF be used in high frequency switching applications?
A: Yes, the IRG4PC40SPBF is suitable for high-frequency switching due to its high-speed capabilities and robust construction.

Equivalent

For similar functionalities, consider these alternatives to the IRG4PC40SPBF:

  • IRF740: A power MOSFET with comparable power handling capabilities suitable for high power applications.
  • IXYS IXGQ90N33T: A high voltage IGBT with similar performance characteristics to the IRG4PC40SPBF, suitable for power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.5 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 160 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Brand Infineon Technologies
Continuous Collector Current Ic Max 60 A Height 20.3 mm
Length 15.9 mm Product Type IGBT Transistors
Factory Pack Quantity 400 Subcategory IGBTs
Width 5.3 mm Unit Weight 1.340411 oz

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