IRG4PC40SPBF
IGBTs 160W 60A 600V TO-247AC ROHS
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $2.651 | $2.65 |
200 | $1.027 | $205.40 |
500 | $0.991 | $495.50 |
1000 | $0.972 | $972.00 |
Inventory:7,712
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IRG4PC40SPBF
-
Package/Case : TO-247-3
-
Brand : International Rectifier
-
Components Classification : Single IGBTs
-
Datesheet : IRG4PC40SPBF DataSheet (PDF)
The IRG4PC40SPBF is a high power IGBT (Insulated Gate Bipolar Transistor) designed for use in power electronics applications. It features a high voltage, high speed switching capability, making it suitable for high power switching applications such as motor controls, inverters, and power supplies. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRG4PC40SPBF IGBT for a visual representation. Note: For detailed technical specifications, please refer to the IRG4PC40SPBF datasheet. Functionality The IRG4PC40SPBF operates as a high power IGBT, allowing for efficient and controlled switching of high power loads in various applications. It provides reliable performance in demanding environments. Usage Guide Q: Can the IRG4PC40SPBF be used in high frequency switching applications? For similar functionalities, consider these alternatives to the IRG4PC40SPBF:Overview of IRG4PC40SPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the IRG4PC40SPBF is suitable for high-frequency switching due to its high-speed capabilities and robust construction.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.5 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 60 A |
Pd - Power Dissipation | 160 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Brand | Infineon Technologies |
Continuous Collector Current Ic Max | 60 A | Height | 20.3 mm |
Length | 15.9 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 400 | Subcategory | IGBTs |
Width | 5.3 mm | Unit Weight | 1.340411 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
![IRFP7530PBF](/files/uploads/product/s/irfp7530pbf-22121154.webp)
IRFP7530PBF
Tube Packaged N-Channel Silicon MOSFET, Suitable for High Power Applications with 60V Voltage Rating and 281A Maximum Current Rating
![IRF2805PBF](/files/uploads/product/s/46f79b151e334a98a38881aa3150ae7c.webp)
IRF2805PBF
The IRF2805PBF is a single N-Channel HEXFET® Power Mosfet with a voltage rating of 55V, a low on-resistance of 4
![IRF3205STRLPBF](/files/uploads/product/s/433af3da-fefa-4147-e07d-08dbc6589f1e.webp)
IRF3205STRLPBF
Channel MOSFET, 110A, 55V, 3-Pin D2PAK
![IRFR6215TRPBF](/files/uploads/product/s/afaa2153-9942-443c-7231-08dbbf1058dd.webp)
IRFR6215TRPBF
With a low on-state resistance of 295mΩ at 10V and 6.6A, IRFR6215TRPBF is capable of handling up to 110W of power
![IRLB8743PBF](/files/uploads/product/s/96ed7eb7-eaeb-413e-752f-08dbc6589f1f.webp)
IRLB8743PBF
IRLB8743PBF N-Channel MOSFET, 150 A, 30 V HEXFET, 3-Pin TO-220AB Infineon
![IRLML0060TRPBF](/files/uploads/product/s/215179ae-dbe5-431d-624b-08dbbf1058dd.webp)
IRLML0060TRPBF
Power MOSFET, 2.7A Drain Current, 60V Voltage Rating, 0.092ohm On-Resistance, N-Channel Silicon Transistor
![IRLR3110ZTRPBF](/files/uploads/product/s/IRLR3110ZTRPBF-22102500.webp)
IRLR3110ZTRPBF
N-channel Power MOSFET with 100V voltage rating and 63A current rating
![IRLR8726PBF](/files/uploads/product/s/irlr8726pbf-22132837.webp)
IRLR8726PBF
MOSFET 30V 1 N-CH HEXFET
![IRF7306PBF](/files/uploads/product/s/69918ce6-4500-4f97-4b35-08dbc6589f1f.webp)
IRF7306PBF
N-Channel HEXFET MOSFET with 20V rating, dual configuration, and 100mOhms channel resistance
![IRFS7430-7PPBF](/files/uploads/product/s/aec6026b-e99b-4bf1-29b9-08dbc6589f1f.webp)
IRFS7430-7PPBF
40V N Channel MOSFET with a maximum current rating of 240mA and a power dissipation of 375W
![IRFS38N20DTRLP](/img/package/d2pak3.jpg)
IRFS38N20DTRLP
N-channel MOSFET capable of conducting 43A with a maximum power dissipation of 300W
![IRF7910](/img/package/so8.jpg)
IRF7910
Suitable for a variety of electronic applications requiring high power switching
![SIA436DJ-T1-GE3](/img/package/sc70.jpg)
SIA436DJ-T1-GE3
Vishay SIA436DJ-T1-GE3 N-channel MOSFET Transistor, 12 A, 8 V, 6-Pin PowerPAK SC-70
![PN4118](/img/package/to92.jpg)
PN4118
JFET N-Channel -40V Low Ciss
![2SD2675TL](/img/package/sot23.jpg)
2SD2675TL
NPN transistor with low VCE(sat)
![BUX98APW](/img/package/to247.jpg)
BUX98APW
24A NPN silicon power transistor
![STD5NM60T4](/img/package/dpak2.jpg)
STD5NM60T4
DPAK-packaged MDmesh Power MOSFET featuring N-Channel operation at 600V with a typical resistance of 0.9 Ohms and a 5A current rating
![IXFH50N50P3](/img/package/to247.jpg)
IXFH50N50P3
Field-Effect Transistor for Power Applications - IXFH50N50P3
![MJF18008G](/img/package/llp.jpg)
MJF18008G
MJF18008G Bipolar Transistors
![IRFR5410PBF](/img/package/to252.jpg)
IRFR5410PBF
Single P-Channel Power MOSFET with a voltage rating of 100V in a D-Pak package