SI3421DV-T1-GE3

Name: SI3421DV-T1-GE3
Brand: Siliconix
Rating: 4.5 (10 reviews)

VISHAY - SI3421DV-T1-GE3 - MOSFET, P CHANNEL, -30V, -8A, TSOP-6

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Part Number : SI3421DV-T1-GE3
Package/Case : SOT23-6
Brand : Siliconix
Components Classification : Single FETs, MOSFETs
Datesheet : SI3421DV-T1-GE3 DataSheet (PDF)
Series : SI3421DV

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Overview of SI3421DV-T1-GE3

The SI3421DV-T1-GE3 is a dual-channel N-channel MOSFET with Schottky diode that is designed for high-frequency DC-DC synchronous buck conversion. It features low on-resistance and a fast body diode, making it suitable for efficient power management in various applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

GATE1: Gate terminal for channel 1
SOURCE1: Source terminal for channel 1
DRAIN1: Drain terminal for channel 1
GATE2: Gate terminal for channel 2
SOURCE2: Source terminal for channel 2
DRAIN2: Drain terminal for channel 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI3421DV-T1-GE3 for a visual representation.

Key Features

Dual-Channel N-Channel MOSFET: Provides two independent channels for high-efficiency synchronous buck conversion.
Low On-Resistance: The MOSFET features low on-resistance for minimal power losses during switching.
Fast Body Diode: Incorporates a fast body diode to ensure rapid and efficient power flow.
High-Frequency Operation: Designed for high-frequency DC-DC power conversion applications.
Compact Package: Available in a space-saving and thermally efficient PowerPAK® SO-8 package.

Note: For detailed technical specifications, please refer to the SI3421DV-T1-GE3 datasheet.

Application

DC-DC Power Conversion: Ideal for high-frequency synchronous buck conversion in power supply systems.
Power Management: Suitable for efficient power management and voltage regulation in various electronic devices and systems.
Switching Converters: Used in switching converter applications for high-efficiency power delivery.

Functionality

The SI3421DV-T1-GE3 MOSFET with Schottky diode provides efficient and reliable power management solutions for high-frequency DC-DC conversion applications, ensuring minimal power losses and fast switching performance.

Usage Guide

Gate Drive: Apply appropriate gate drive signals to GATE1/GATE2 to control the switching of the MOSFET channels.
Input/Output Connections: Connect the input power source to DRAIN1/DRAIN2 and the load to SOURCE1/SOURCE2.
Thermal Management: Ensure proper thermal management to optimize the performance and reliability of the MOSFET.

Frequently Asked Questions

Q: What is the maximum operating frequency for the SI3421DV-T1-GE3?
A: The SI3421DV-T1-GE3 is designed for high-frequency operation and can support frequencies commonly used in DC-DC conversion applications.

Q: Is the SI3421DV-T1-GE3 suitable for high-power applications?
A: Yes, the low on-resistance and efficient body diode make the SI3421DV-T1-GE3 suitable for high-power applications requiring synchronous buck conversion.

Equivalent

For similar functionalities, consider these alternatives to the SI3421DV-T1-GE3:

SI7469DP-T1-GE3: This dual N-channel MOSFET from Vishay provides similar functionality with additional features tailored to specific applications.
IRF7749L2TRPBF: A dual N-channel power MOSFET from Infineon with comparable characteristics and performance for high-frequency power conversion.
NTMFS4821NT1G: This dual N-channel MOSFET with Schottky diode from ON Semiconductor offers similar power management capabilities with enhanced thermal performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	TSOP-6	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	8 A	Rds On - Drain-Source Resistance	19.2 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	46 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	4.2 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI3	Brand	Vishay Semiconductors
Configuration	Single	Fall Time	13 ns
Forward Transconductance - Min	30 S	Product Type	MOSFET
Rise Time	9 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	55 ns	Typical Turn-On Delay Time	7 ns
Unit Weight	0.000705 oz

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