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BSC109N10NS3GATMA1

TDSON-8 Package Power Mosfet

Inventory:9,751

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Overview of BSC109N10NS3GATMA1

The BSC109N10NS3GATMA1 is a 100V N-channel power MOSFET designed for high-efficiency power switching applications. It features a low on-state resistance and high-speed switching capability, making it ideal for use in power supplies, motor control, and other power management systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the BSC109N10NS3GATMA1 MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The BSC109N10NS3GATMA1 can handle up to 100V, suitable for various high-power applications.
  • Low On-State Resistance: With a low RDS(on), this MOSFET minimizes power loss and improves efficiency in switching circuits.
  • Fast Switching Speed: The high-speed switching capability of the BSC109N10NS3GATMA1 allows for rapid power control and regulation.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation, ensuring stable operation under high loads.
  • Robust Construction: Built to withstand high voltage and current levels for reliable performance in demanding environments.

Note: For detailed technical specifications, please refer to the BSC109N10NS3GATMA1 datasheet.

Application

  • Power Supplies: Ideal for use in power supply units for efficient power management and voltage regulation.
  • Motor Control: Suitable for motor drive applications in industrial and automotive systems, providing precise control.
  • Power Management: Used in various power management systems to optimize energy efficiency and performance.

Functionality

The BSC109N10NS3GATMA1 MOSFET is a high-voltage, high-speed switching device that enables efficient power control in a wide range of applications. Its low on-state resistance and fast switching characteristics make it a reliable choice for power electronics.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the control signal for turning the MOSFET on and off.
  • Source and Drain: Connect the load circuit between the source (S) and drain (D) pins of the MOSFET.

Frequently Asked Questions

Q: What is the maximum voltage rating of the BSC109N10NS3GATMA1?
A: The BSC109N10NS3GATMA1 can handle a maximum voltage of 100V, making it suitable for high-power applications.

Q: Is the BSC109N10NS3GATMA1 suitable for PWM applications?
A: Yes, this MOSFET is well-suited for pulse-width modulation (PWM) applications due to its fast switching speed and low on-state resistance.

Equivalent

For similar functionalities, consider these alternatives to the BSC109N10NS3GATMA1:

  • IRF3205: A popular N-channel power MOSFET with similar voltage and current ratings.
  • FQP30N06L: This MOSFET offers comparable performance and characteristics to the BSC109N10NS3GATMA1 for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo MS; RoHS compliant, non dry
packageNameMarketing SuperSO8 5x6 msl 1
halogenFree yes customerInfo STANDARD
fgr P32 productClassification COM
productStatusInfo active hfgr A
packageName PG-TDSON-8 pbFree yes
moistureProtPack NON DRY orderingCode SP000778132
fourBlockPackageName PG-TDSON-8-1 rohsCompliant yes
opn BSC109N10NS3GATMA1 completelyPbFree no
sapMatnrSali SP000778132

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