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SI2333DDS-T1-GE3

SOT-23 MOSFET designed for P Channel operation, featuring a 12V voltage rating and a resistance of 28mΩ at 4.5V for currents up to 6A

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Overview of SI2333DDS-T1-GE3

The SI2333DDS-T1-GE3 is a P-Channel MOSFET transistor designed for use in various electronic circuits. This transistor features a compact SOT-23 package and is suitable for applications requiring low power consumption and efficient switching capabilities.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI2333DDS-T1-GE3 MOSFET transistor for a visual representation.

Key Features

  • P-Channel MOSFET: This transistor is a P-Channel MOSFET suitable for low-power applications.
  • Compact Package: The SOT-23 package offers a space-saving design for efficient PCB layouts.
  • Low Power Consumption: The SI2333DDS-T1-GE3 is optimized for low power operation.
  • High Switching Speed: Provides fast switching characteristics for responsive circuit performance.
  • Wide Operating Voltage Range: Operates effectively within a wide voltage range for versatile applications.

Note: For detailed technical specifications, please refer to the SI2333DDS-T1-GE3 datasheet.

Application

  • Power Management: Ideal for power control and management in electronic systems.
  • Switching Circuits: Suitable for use in various switching circuits requiring P-Channel MOSFETs.
  • Battery-Powered Devices: Applicable in battery-powered devices due to its low power characteristics.

Functionality

The SI2333DDS-T1-GE3 is a P-Channel MOSFET transistor that facilitates efficient power control and switching within electronic circuits, making it a versatile component for various applications.

Usage Guide

  • Gate Connection: Connect the Gate pin to the control signal for switching operations.
  • Drain Connection: Connect the Drain pin to the load for power flow control.
  • Source Connection: Connect the Source pin to the ground reference in the circuit.

Frequently Asked Questions

Q: Can this transistor be used in high-temperature environments?
A: Yes, the SI2333DDS-T1-GE3 is designed to operate efficiently in high-temperature environments.

Equivalent

For similar functionalities, consider these alternatives to the SI2333DDS-T1-GE3:

  • SI2333CDS-T1-GE3: Another variant of the SI2333 series offering similar performance with slight differences.
  • SI2333DST1-E3: A compatible MOSFET transistor from the SI2333 series, suitable for comparable applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 23 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.7 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Brand Vishay Semiconductors
Configuration Single Fall Time 20 ns
Height 1.45 mm Length 2.9 mm
Product Type MOSFET Rise Time 24 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 26 ns Width 1.6 mm
Part # Aliases SI2333DDS-T1-BE3 Unit Weight 0.000282 oz

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