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JANTX2N3741

JANTX2N3741 details: TO-66 (TO-213AA) package, ROHS compliant

Quantity Unit Price(USD) Ext. Price
1 $64.960 $64.96
200 $25.919 $5,183.80
500 $25.054 $12,527.00
1000 $24.626 $24,626.00

Inventory:9,739

*The price is for reference only.
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Overview of JANTX2N3741

The JANTX2N3741 is a high-power NPN bipolar junction transistor (BJT) designed for use in high-voltage and high-current applications. It features a rugged construction and is suitable for demanding industrial and military environments.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the JANTX2N3741 for a visual representation.

Key Features

  • High Power: The JANTX2N3741 is capable of handling high-voltage and high-current loads, making it suitable for power amplifier and high-power switching applications.
  • Rugged Construction: This BJT is designed to withstand harsh environmental conditions, making it suitable for industrial and military applications.
  • Reliable Performance: With its high-power handling capabilities, the JANTX2N3741 offers reliable and consistent performance in demanding scenarios.
  • Wide Temperature Range: The transistor is rated for operation over a wide temperature range, ensuring stability in various thermal conditions.
  • Robust Packaging: The JANTX2N3741 is available in rugged and reliable packaging suitable for demanding applications.

Note: For detailed technical specifications, please refer to the JANTX2N3741 datasheet.

Application

  • Power Amplification: Ideal for use in power amplifier circuits requiring high-voltage and high-current handling capabilities.
  • Switching Circuits: Suitable for high-power switching applications in industrial and military systems.
  • Industrial Electronics: Used in various industrial electronics applications where high-power transistors are required.

Functionality

The JANTX2N3741 is a high-power NPN bipolar junction transistor designed to handle high-voltage and high-current loads with ruggedness and reliability. It provides essential amplification and switching functions in demanding environments.

Usage Guide

  • Power Supply: Connect the collector (C) to the positive power supply and the emitter (E) to the load for power applications.
  • Base Control: Apply the control signal to the base (B) terminal to regulate the transistor's conduction for switching applications.
  • Heat Dissipation: Ensure proper heat sinking and thermal management due to the high-power nature of the JANTX2N3741.

Frequently Asked Questions

Q: Is the JANTX2N3741 suitable for automotive applications?
A: Yes, the JANTX2N3741's rugged construction and high-power capabilities make it suitable for use in automotive electronics requiring high-voltage and high-current handling.

Equivalent

For similar functionalities, consider these alternatives to the JANTX2N3741:

  • JANTX2N5416: Another high-power NPN transistor suitable for rugged and high-voltage applications.
  • JANTXV2N6766: This BJT offers similar high-power handling and ruggedness for demanding environments.
  • JANS2N3501: A military-grade NPN transistor designed for high-power applications with rugged construction.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS N
Mounting Style Through Hole Package / Case TO-66-2
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 4 A Pd - Power Dissipation 25 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Brand Microchip / Microsemi DC Collector/Base Gain hfe Min 30 at 250 mA, 1 VDC
DC Current Gain hFE Max 120 at 250 mA, 1 VDC Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si

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