JANTX2N3741
JANTX2N3741 details: TO-66 (TO-213AA) package, ROHS compliant
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $64.960 | $64.96 |
200 | $25.919 | $5,183.80 |
500 | $25.054 | $12,527.00 |
1000 | $24.626 | $24,626.00 |
Inventory:9,739
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Part Number : JANTX2N3741
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Package/Case : TO-66-2
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Brand : Microchip
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Components Classification : Single Bipolar Transistors
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Datesheet : JANTX2N3741 DataSheet (PDF)
The JANTX2N3741 is a high-power NPN bipolar junction transistor (BJT) designed for use in high-voltage and high-current applications. It features a rugged construction and is suitable for demanding industrial and military environments. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the JANTX2N3741 for a visual representation. Note: For detailed technical specifications, please refer to the JANTX2N3741 datasheet. Functionality The JANTX2N3741 is a high-power NPN bipolar junction transistor designed to handle high-voltage and high-current loads with ruggedness and reliability. It provides essential amplification and switching functions in demanding environments. Usage Guide Q: Is the JANTX2N3741 suitable for automotive applications? For similar functionalities, consider these alternatives to the JANTX2N3741:Overview of JANTX2N3741
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the JANTX2N3741's rugged construction and high-power capabilities make it suitable for use in automotive electronics requiring high-voltage and high-current handling.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-66-2 |
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 80 V | Collector- Base Voltage VCBO | 80 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 400 mV |
Maximum DC Collector Current | 4 A | Pd - Power Dissipation | 25 W |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Brand | Microchip / Microsemi | DC Collector/Base Gain hfe Min | 30 at 250 mA, 1 VDC |
DC Current Gain hFE Max | 120 at 250 mA, 1 VDC | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si |
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