SBC857BDW1T1G
Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R
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Part Number : SBC857BDW1T1G
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Package/Case : SOT-363-6
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Brand : onsemi
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Components Classification : Bipolar Transistor Arrays
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Datesheet : SBC857BDW1T1G DataSheet (PDF)
Overview of SBC857BDW1T1G
When it comes to amplification tasks, the SBC857BDW1T1G Dual PNP Bipolar Transistor stands out for its reliability and efficiency. Its small yet robust SOT-363/SC-88 package ensures easy integration into your circuit board, making it a popular choice for designers looking to save space without compromising on performance. Whether you are designing a portable electronic device or a sophisticated audio system, this transistor is up to the task
Key Features
- AEC-Q101 Compliant
- Lead-Free and RoHS Compliant
- Pb-Free Packages Available
- NSV Prefix for Unique Site Requirements
- Series AEC-Q100 Qualified
- Automotive Grade and PPAP Capable
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Status | Active | Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 100mA | Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V | Power - Max | 380mW |
| Frequency - Transition | 100MHz | Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive | Qualification | AEC-Q101 |
| Mounting Type | Surface Mount | Package / Case | SOT-363-6 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 | Base Product Number | SBC857 |
| Manufacturer | onsemi | Product Category | Bipolar Transistors - BJT |
| RoHS | Details | Mounting Style | SMD/SMT |
| Transistor Polarity | PNP | Configuration | Dual |
| Collector- Emitter Voltage VCEO Max | 45 V | Collector- Base Voltage VCBO | 50 V |
| Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 650 mV |
| Maximum DC Collector Current | 100 mA | Pd - Power Dissipation | 380 mW |
| Gain Bandwidth Product fT | 100 MHz | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | BC857BDW1 |
| Brand | onsemi | DC Collector/Base Gain hfe Min | 220 at - 2 mA, - 5 V |
| DC Current Gain hFE Max | 475 at - 2 mA, - 5 V | Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | Subcategory | Transistors |
| Technology | Si | Unit Weight | 0.000265 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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