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SBC857BLT1G

PNP bipolar transistor configuration

Quantity Unit Price(USD) Ext. Price
5 $0.081 $0.40
50 $0.066 $3.30
150 $0.058 $8.70
500 $0.053 $26.50
3000 $0.047 $141.00
6000 $0.045 $270.00

Inventory:5,641

*The price is for reference only.
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Overview of SBC857BLT1G

The SBC857BLT1G's compact size allows for easy integration into circuit designs, saving valuable space and simplifying assembly processes. Its robust build and excellent thermal performance make it a dependable choice for demanding applications where precision and stability are key

Key Features

  • SMT Assemblies Available
  • RoHS Compliant and Halogen-Free
  • Automotive-Grade Quality Assurance
  • Wide Temperature Range for Industrial Applications
  • Low Power Consumption for Energy-Efficient Designs
  • AEC-Q100 Qualified for Space and Aerospace Apps

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V Power - Max 300 mW
Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) Base Product Number SBC857

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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