• packageimg
packageimg

SBC846BDW1T1G

Trans GP BJT NPN 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R

Quantity Unit Price(USD) Ext. Price
5 $0.129 $0.64
50 $0.105 $5.25
150 $0.094 $14.10
500 $0.085 $42.50
3000 $0.069 $207.00
6000 $0.065 $390.00

Inventory:9,516

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for SBC846BDW1T1G using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SBC846BDW1T1G

Whether used in power supplies, voltage regulators, or other power conversion circuits, the ON Semiconductor SBC846BDW1T1G delivers exceptional performance and efficiency. With its advanced Schottky barrier technology, this diode offers superior power conversion capabilities, making it a reliable choice for applications where high efficiency and low power loss are paramount. Its compact design, wide operating temperature range, and ease of integration make it a versatile solution for diverse electronics projects

Key Features

  • ISO/TS16949 and ISO14001 Certified
  • AEC-Q100 Qualified and PPAP Capable
  • SMD and DIP Package Options Available
  • Operating Temperature Range: -40°C to 125°C
  • EMC Compliant with FCC Part 15, Subpart B
  • Certified to IEC 62351-3 Standard for Cybersecurity

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 65V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V Power - Max 380mW
Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 Base Product Number SBC846

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IXTN30N100L

IXTN30N100L

Channel 1KV 30A SOT-227B Trans MOSFET
IRF7105TRPBF

IRF7105TRPBF

25V N/P-Channel MOSFET, 3.5A/2.3A, 8-Pin SOIC Package, Tape and Reel
BSL308PEH6327XTSA1

BSL308PEH6327XTSA1

MOSFET small signal with P-channel
IXFX32N100Q3

IXFX32N100Q3

N-channel metal-oxide-semiconductor field-effect transistor capable of handling up to 1000 volts and 32 amps
SIA931DJ-T1-GE3

SIA931DJ-T1-GE3

VISHAY - SIA931DJ-T1-GE3 - Dual MOSFET, P Channel, 30 V, 4.5 A, 0.052 ohm, PowerPAK SC70, Surface Mount
SSM3J338R,LF

SSM3J338R,LF

12V, 6A, 17.6mΩ @ 8V
SCT3030ALGC11

SCT3030ALGC11

TrenchMOS N-Channel MOSFET made of silicon carbide, designed for high voltage applications with 70A current capability and low 30mOhm resistance
PSMN017-60YS,115

PSMN017-60YS,115

Trans MOSFET N-CH 60V 44A 5-Pin(4+Tab) LFPAK T/R
2SC5658T2LR

2SC5658T2LR

Small Signal Bipolar Transistor, VMT3, NPN, 3 PIN, Silicon
AOD2910E

AOD2910E

AOD2910E is a field-effect transistor optimized for N-channel operation, designed to manage voltages up to 100 volts and currents up to 11 amps