SBC847BLT1G
Device labeled SBC847BLT1G featuring NPN silicon technology, designed for applications requiring small signal amplification
Inventory:7,347
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Part Number : SBC847BLT1G
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Package/Case : SOT23-3
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Brand : Onsemi
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Components Classification : Single Bipolar Transistors
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Datesheet : SBC847BLT1G DataSheet (PDF)
The SBC847BLT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for amplification and switching applications. This transistor features a high current gain and low saturation voltage, making it suitable for various circuit designs in electronics. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SBC847BLT1G transistor for a visual representation. Note: For detailed technical specifications, please refer to the SBC847BLT1G datasheet. Functionality The SBC847BLT1G NPN transistor is used to amplify or switch electronic signals in various circuits. Its high current gain and low saturation voltage make it a versatile component for different applications. For similar functionalities, consider these alternatives to the SBC847BLT1G:Overview of SBC847BLT1G
Pinout
Circuit Diagram
Key Features
Application
Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | Compliance | PbAHP |
Package Type | SOT-23-3 | Case Outline | 318-08 |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 3000 |
ON Target | N | Polarity | NPN |
Type | General Purpose | VCE(sat) Max (V) | 0.25 |
IC Cont. (A) | 0.1 | VCEO Min (V) | 45 |
VCBO (V) | 50 | VEBO (V) | 6 |
VBE(sat) (V) | 0.7 | VBE(on) (V) | 0.66 |
hFE Min | 200 | hFE Max | 450 |
fT Min (MHz) | 100 | PTM Max (W) | 0.225 |
Pricing ($/Unit) | $0.0425 |
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