• packageimg
packageimg

SBC847BDW1T1G

Trans GP BJT NPN 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R

Inventory:6,137

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for SBC847BDW1T1G using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SBC847BDW1T1G

The SBC847BDW1T1G Dual NPN Bipolar Transistor combines functionality and convenience in a single package. Its low power consumption and high gain make it a suitable choice for a wide range of amplifier applications. The SOT-363/SC-88 package enhances the transistor's performance by providing effective thermal management and easy soldering. Whether you're looking to amplify audio signals, improve signal integrity, or enhance the performance of your electronic projects, this transistor offers the reliability and versatility you need

Key Features

  • Fully RoHS and REACH Compliant
  • Qualification for Industrial Use
  • Automotive Grade Quality Guaranteed

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V Power - Max 380mW
Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive Qualification AEC-Q101
Mounting Type Surface Mount Package / Case SOT-363-6
Supplier Device Package SC-88/SC70-6/SOT-363 Base Product Number SBC847
Manufacturer onsemi Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 45 V Collector- Base Voltage VCBO 50 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 600 mV
Maximum DC Collector Current 100 mA Pd - Power Dissipation 380 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series BC847BDW1
Brand onsemi DC Collector/Base Gain hfe Min 200 at 2 mA, 5 V
DC Current Gain hFE Max 450 at 2 mA, 5 V Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Unit Weight 0.000265 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

NTD6416ANLT4G

NTD6416ANLT4G

This MOSFET N-channel device is suitable for high power applications requiring efficient switching
SI5618-TP

SI5618-TP

Power MOSFET suitable for applications requiring a P-channel device with high current-handling capabilities
IRFP3006PBF

IRFP3006PBF

IRFP3006PBF TO-247 MOSFETs ROHS
SI7164DP-T1-GE3

SI7164DP-T1-GE3

N-Channel Power Field-Effect Transistor with 23.5A current capacity and 60V voltage capacity
SI4401BDY-T1-E3

SI4401BDY-T1-E3

Unipolar Transistor
APT20M22JVR

APT20M22JVR

Product description: MOSFET with 200V voltage rating and 22mOhm resistance in SOT-227 package
IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2

Automotive-Grade N-Channel MOSFET
BTS114A

BTS114A

BTS114A: Power Field-Effect Transistor
CM200DU-24NFH

CM200DU-24NFH

Dual High-Frequency IGBT Modules NFH-Series
SMA5125

SMA5125

N/P-channel 60V 10A 12-pin SIP Transistor MOSFET