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SBC817-25LT1G

Automotive Trans GP BJT NPN 45V 0.5A 300mW 3-Pin SOT-23 T/R

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Overview of SBC817-25LT1G

The SBC817-25LT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for a wide range of electronic applications. It features a high current gain and low saturation voltage, making it suitable for amplification, switching, and linear voltage regulation.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SBC817-25LT1G for a visual representation.

Key Features

  • High Current Gain: The SBC817-25LT1G offers a high current gain (hfe), providing efficient signal amplification.
  • Low Saturation Voltage: With a low VCE(sat), this transistor minimizes energy loss in saturation, making it suitable for switching applications.
  • SOT-23 Package: Housed in a compact SOT-23 package, it offers space-saving and surface-mount capabilities.
  • Wide Operating Temperature Range: The transistor can operate within a wide temperature range, suitable for various environmental conditions.

Note: For detailed technical specifications, please refer to the SBC817-25LT1G datasheet.

Application

  • Amplification: Ideal for small-signal amplification in audio and RF applications.
  • Switching: Suitable for low-power switching applications in digital and analog circuits.
  • Voltage Regulation: Can be used in linear voltage regulator circuits for stable voltage output.

Functionality

The SBC817-25LT1G is a versatile NPN transistor that provides high current gain and low saturation voltage, enabling it to amplify signals, switch circuits, and regulate voltages efficiently.

Usage Guide

  • Biasing: Properly bias the base-emitter junction to enable amplification or switching functionality.
  • Heat Dissipation: Ensure adequate heat sinking for the transistor to prevent thermal issues during operation.
  • Connection: Connect the collector, base, and emitter pins according to the circuit requirements.

Frequently Asked Questions

Q: What is the maximum collector current of the SBC817-25LT1G?
A: The maximum collector current (IC) is specified in the datasheet and depends on operating conditions and thermal considerations.

Q: Is the SBC817-25LT1G suitable for high-frequency applications?
A: The SBC817-25LT1G can be used in high-frequency applications within its specified frequency response, but higher frequency applications may require specialized RF transistors.

Equivalent

For similar functionalities, consider these alternatives to the SBC817-25LT1G:

  • 2N2222: A widely used NPN transistor with similar amplification and switching capabilities.
  • BC548: This is another general-purpose NPN transistor commonly used in amplification and switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity NPN
Type General Purpose VCE(sat) Max (V) 0.7
IC Cont. (A) 0.5 VCEO Min (V) 45
VCBO (V) 50 VEBO (V) 5
VBE(on) (V) 1.2 hFE Min 160
hFE Max 400 fT Min (MHz) 100
PTM Max (W) 0.225 Pricing ($/Unit) $0.0264

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