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NVR4003NT3G

N-Channel Transistor with 30V Voltage Rating and 0.5A Current

Inventory:9,181

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Overview of NVR4003NT3G

Available in a 10000-reel packaging option, the NVR4003NT3G is perfect for high-volume production runs, saving you time and money on component sourcing. Whether you're designing automotive control systems, power management circuits, or any other application that requires a high-performance MOSFET, the NVR4003NT3G is a top choice for engineers looking for reliability and efficiency

Key Features

  • Advanced Thermal Management
  • Low Noise and RFI Immunity
  • Silicon-Germanium Heterojunction FET
  • Submicron Gate Length with High Current Density
  • Achieves Breakdown Voltage of 40 V
  • Reduced EMI and RFI for Efficient Power Conversion

Application

  • Wireless Connectivity
  • High Efficiency
  • Automotive Solutions

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Not For New Designs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.15 nC @ 5 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 21 pF @ 5 V Power Dissipation (Max) 690mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number NVR4003

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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