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NPTB00025B

Transistors for Radio Frequency applications

Inventory:3,595

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Overview of NPTB00025B

The NPTB00025B is a high-performance N-channel power MOSFET designed for various power management applications. It features a low on-state resistance and high switching speed, making it suitable for applications requiring high efficiency and fast switching.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for the MOSFET
  • D: Drain terminal for the MOSFET
  • S: Source terminal for the MOSFET
  • VCC: Positive power supply
  • GND: Power ground
  • VS: Sense terminal for overcurrent protection
  • NC: No connection
  • NC: No connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NPTB00025B MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: Provides efficient power management with minimal voltage drop.
  • High Switching Speed: Enables fast switching for improved system performance.
  • Wide Operating Voltage Range: Operates within a broad voltage range, offering flexibility in various applications.
  • Overcurrent Protection: Includes a sense terminal for overcurrent protection, enhancing system reliability.
  • Compact Package: Available in a space-saving and thermally efficient package for easy integration.

Note: For detailed technical specifications, please refer to the NPTB00025B datasheet.

Application

  • Power Management Systems: Ideal for use in power supplies, motor control, and voltage regulation systems.
  • Switching Circuits: Suitable for high-frequency switching applications in converters and inverters.
  • Electronic Load Control: Used for electronic load switches and power distribution systems.

Functionality

The NPTB00025B MOSFET is designed to efficiently manage power by providing low resistance and high-speed switching capabilities. It is a reliable component for power control and regulation in various electronic systems.

Usage Guide

  • Gate Control: Apply the control voltage to the gate terminal (G) to manage the MOSFET's conductivity.
  • Power Connections: Connect the drain terminal (D) to the load and the source terminal (S) to the ground or return path.
  • Overcurrent Protection: Utilize the sense terminal (VS) for overcurrent protection to safeguard the system from excessive current.

Frequently Asked Questions

Q: Is the NPTB00025B suitable for high-power applications?
A: Yes, the low on-state resistance and high switching speed make the NPTB00025B well-suited for high-power applications requiring efficient power management.

Equivalent

For similar functionalities, consider these alternatives to the NPTB00025B:

  • NTD5867NL: This N-channel MOSFET provides similar high-performance characteristics for power management applications.
  • FDBL0140N: A robust N-channel MOSFET suitable for power switching and control with comparable specifications to the NPTB00025B.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF JFET Transistors RoHS Details
Transistor Type HEMT Technology GaN-on-Si
Brand MACOM Product Type RF JFET Transistors
Factory Pack Quantity 30 Subcategory Transistors

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