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NVMTSC4D3N15MC

N-Channel Power MOSFET

Inventory:9,707

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Overview of NVMTSC4D3N15MC

When it comes to automotive power MOSFETs, the NVMTSC4D3N15MC stands out for its exceptional design and performance features. With a compact 8x8mm flat lead package and high thermal performance, this MOSFET is perfect for space-constrained automotive designs that require optimal efficiency. Its Wettable Flank capability further enhances its appeal by allowing for Enhanced Optical Inspection, ensuring high-quality and reliable performance. In addition, this MOSFET is AEC-Q101 Qualified and PPAP capable, making it a trusted choice for automotive applications that demand excellence

Key Features

  • High Temperature Storage
  • Pulse Width Modulation
  • Dual Power Supply
  • AEC−Q101 Qualified
  • Rapid Startup Capability
  • Silicon Valley Design

Application

  • Compact size power regulators
  • Efficient power conversion
  • Customizable power solutions

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series DUAL COOL® Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.45mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4.5V @ 521µA Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6514 pF @ 75 V
Power Dissipation (Max) 5W (Ta), 292W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Supplier Device Package 8-TDFNW (8.3x8.4)
Package / Case 8-PowerTDFN Manufacturer onsemi
Product Category MOSFET RoHS Details
REACH Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 150 V Id - Continuous Drain Current 165 A
Rds On - Drain-Source Resistance 4.45 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4.5 V Qg - Gate Charge 79 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 292 W Channel Mode Enhancement
Brand onsemi Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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